Me yasa dole ne mu yi amfani da Ge a matsayin na'urar gano hoto

Me yasa dole ne mu yi amfani da Ge a matsayinna'urar gano hoto
1, Matsayi na asali: Me yasa ake buƙatar amfani da Ge azaman na'urar gano hoto
A cikin hanyoyin haɗin silicon, na'urar gano haske sune "masu fassara" waɗanda ke mayar da siginar gani zuwa siginar lantarki. Duk da haka, silicon da kansa yana da bandgap na 1.12 eV kuma kusan yana da haske ga madannin sadarwa na 1310/1550 nm, don haka germanium (Ge) ne kawai za a iya gabatar da shi.
Ge yana da bandgap kai tsaye na 0.8 eV, wanda ke rufe band ɗin sadarwa na O/C, amma yana da rashin daidaituwar lattice na 4.2% da silicon. Yawan katsewa don girma kai tsaye yana da girma har zuwa 4 × 10 ⁸ cm ⁻ ², kuma hasken rana mai duhu ba ya samuwa kwata-kwata; A lokaci guda, Ge yana da bandgap kai tsaye, kuma ma'aunin sha nasa a zahiri yana ƙasa da InGaAs, wanda rauni ne na halitta.
2, Babban ci gaba: Haɗin gwiwar jagorar raƙuman ruwa yana karya matsalar aiki
"Tsawon sha = hanyar tattara bayanai" na na'urorin gano bayanai na tsaye na gargajiya suna da "bandwidth responsibility", tare da iyakar sama ta 7GHz kawai;
A halin yanzu, manyan hanyoyin na'urori an raba su zuwa rukuni uku:
Na'urar auna tsayi: Tsarin shine mafi sauƙi kuma mafi shahara a masana'antar, yana cimma 40Gb/s @ sifili da kuma bandwidth> 60GHz;
Karfe Mai Juyawa na MSM: Ba a buƙatar yin amfani da maganin zafi mai zafi sosai, ana iya haɗa shi a cikin bayan gida, yana da babban kwararar ruwa mai duhu, da kuma bandwidth sama da 40GHz;
Babban bambance-bambancen:Masu gano hasken raƙuman ruwa masu tafiyaAna amfani da na'urorin gano hotuna masu ɗaukar hoto guda ɗaya (TWPD) da na'urorin gano hotuna masu ɗaukar hoto guda ɗaya (UTC) don haɗin microwave photon, suna daidaita babban bandwidth da babban ƙarfin hoto mai cikakken haske.
3, Kayan Aiki da Sana'a: Mayar da 'Lalacewa' zuwa Fa'idodi
Dangane da rashin daidaiton layin waya da ƙarancin aiki, masana'antar ta ƙirƙiro mafita masu kyau:
Hanyar epitaxy matakai biyu: da farko, ana ƙara ƙaramin Layer na ma'aunin zafi na 30-50nm, sannan a ƙara zafin jiki don isa ga kauri da aka nufa, wanda ke rage yawan tarkace zuwa ~10 ⁷ cm ⁻ ²;
Injiniyan Tauri: Bambancin da ke tsakanin ma'aunin faɗaɗa zafi tsakanin Ge da Si zai haifar da ma'aunin tensile na biaxial na 0.2% a cikin fim ɗin Ge, wanda ke haifar da raguwar tazara ta kai tsaye daga 0.8 eV zuwa 0.77 eV da kuma faɗaɗa gefen sha daga 1.55 μm zuwa 1.61 μm, wanda ke rufe dukkan ma'aunin C+L, har ma da ma'aunin sha a cikin ma'aunin L zai iya daidaita da na InGaAs;
Haɗin CMOS: Har yanzu yana cikin matakin bincike. Haɗin gaba (FEOL) yana buƙatar jure yanayin zafi sama da 750 ℃, yayin da haɗin baya-baya (BEOL) yana da sauƙin zafi amma ba tare da abubuwan da aka yi amfani da su na lu'ulu'u ba, kuma har yanzu bai samar da mafita mai haɗin kai ba. A halin yanzu, masana'antar gabaɗaya tana ɗaukar hanyar gauraya ta "90% guntu ɗaya+waje na waje".laser".