Menene asemiconductor na gani amplifier
Na'ura mai ɗaukar hoto ta semiconductor nau'in amplifier ne na gani wanda ke amfani da matsakaicin riba na semiconductor. Ya yi kama da diode laser, wanda aka maye gurbin madubi a ƙananan ƙarshen tare da sutura mai mahimmanci. Ana watsa hasken sigina ta hanyar jagorar igiyar ruwa guda ɗaya. Matsakaicin girman raƙuman raƙuman ruwa shine 1-2 micrometers kuma tsayinsa yana kan tsari na 0.5-2mm. Yanayin waveguide yana da mahimmiyar jeri tare da yanki mai aiki (amplification), wanda na yanzu ke yin famfo. Yanzu allurar tana haifar da wani ƙayyadaddun maida hankali mai ɗaukar hoto a cikin rukunin gudanarwa, yana ba da damar sauye-sauyen gani na rukunin gudanarwa zuwa band ɗin valence. Babban riba yana faruwa ne lokacin da makamashin photon ya ɗan fi ƙarfin bandgap. Ana amfani da amplifier na gani na SOA a tsarin sadarwa ta hanyar alade, tare da tsawon aiki a kusa da 1300nm ko 1500nm, yana samar da kusan 30dB na riba.
TheSOA semiconductor na gani amplifierna'urar haɗin gwiwa ce ta PN tare da tsarin rijiyar ƙima. Ƙimar gaba ta waje tana jujjuya adadin ƙwayoyin dielectric. Bayan hasken tashin hankali na waje ya shiga, ana haifar da radiation mai motsa jiki, yana samun haɓakar siginar gani. Dukkan hanyoyin canja wurin makamashin da ke sama sun wanzu a cikiSOA na gani amplifier. Ƙwararrun siginar gani yana dogara ne akan ƙyalli da aka motsa. Ƙarfafa sha da hanyoyin fitar da kuzari suna wanzuwa lokaci guda. Za a iya amfani da ƙyalli mai ƙyalli na hasken famfo don hanzarta dawo da masu ɗaukar kaya, kuma a lokaci guda, famfo na lantarki na iya aika electrons zuwa matakin makamashi mai girma (conduction band). Lokacin da aka haɓaka radiyo ba tare da bata lokaci ba, zai haifar da ƙarar ƙarar hayaniyar radiyo. SOA na gani amplifier ya dogara ne akan guntuwar semiconductor.
Semiconductor kwakwalwan kwamfuta sun ƙunshi mahadi semiconductor, kamar GaAs/AlGaAs, InP/AlGaAs, InP/InGaAsP da InP/InAlGaAs, da dai sauransu Waɗannan su ne kuma kayan don yin semiconductor Laser. Zane-zane na waveguide na SOA iri ɗaya ne ko kama da na lasers. Bambanci ya ta'allaka ne a cikin cewa lasers suna buƙatar samar da rami mai resonant a kusa da matsakaicin riba don samarwa da kula da oscillation na siginar gani. Za a ƙara ƙara siginar gani sau da yawa a cikin rami kafin fitarwa. A cikiSOA amplifier(abin da muke magana a nan yana iyakance ga masu haɓaka raƙuman ruwa masu tafiya da aka yi amfani da su a yawancin aikace-aikace), haske kawai yana buƙatar wucewa ta matsakaicin riba sau ɗaya, kuma tunanin baya kadan ne. Tsarin amplifier na SOA ya ƙunshi yankuna uku: Area P, Area I (launi mai aiki ko kumburi), da Area N. Layer mai aiki yawanci ya ƙunshi quantum Wells, wanda zai iya inganta haɓakar canjin hoto da kuma rage ƙarfin halin yanzu.
Hoto 1 Fiber Laser tare da hadedde SOA don samar da bugun jini
Aiwatar da canja wurin tashoshi
SOAs yawanci ba kawai ana amfani da su don haɓakawa ba: Hakanan ana iya amfani da su a fagen sadarwar fiber na gani, aikace-aikacen da suka dogara da hanyoyin da ba su dace ba kamar riba mai jikewa ko giciye-ɓangarorin lokaci, waɗanda ke amfani da bambancin maida hankali mai ɗaukar hoto a cikin amplifier na gani na SOA don samun bambance-bambancen refractive fihirisa. Ana iya amfani da waɗannan tasirin zuwa canja wurin tasho (canza tsawon tsayi), jujjuya tsarin daidaitawa, dawo da agogo, sabuntawar sigina da ƙirar ƙira, da sauransu.
Tare da ci gaban optoelectronic hadedde fasaha da'ira da kuma rage yawan masana'antu, da aikace-aikace filayen SOA semiconductor Tantancewar amplifier a matsayin asali amplifiers, aikin gani na'urorin da subsystem sassa za su ci gaba da fadada.
Lokacin aikawa: Juni-23-2025