Tsarin Mai gano Hoto na InGaAs

TsarinMai gano hoto na InGaAs
Tun daga shekarun 1980, masu bincike suna nazarin tsarin na'urorin gano haske na InGaAs, wanda za a iya taƙaita shi zuwa manyan nau'i uku: ƙarfe mai semiconductor na ƙarfe na InGaAsmasu daukar hoto(MSM-PD), InGaAsMasu gano hotunan PIN(PIN-PD), da InGaAsmasu gano ambaliyar ruwa(APD-PD). Akwai manyan bambance-bambance a cikin tsarin samarwa da farashin na'urorin gano hoto na InGaAs masu tsari daban-daban, kuma akwai kuma manyan bambance-bambance a cikin aikin na'ura.
An nuna zane-zanen tsarin na'urar gano ƙarfe ta InGaAs a cikin hoton, wanda tsari ne na musamman wanda ya dogara da mahaɗin Schottky. A cikin 1992, Shi da abokan aikinsa sun yi amfani da fasahar epitaxy na lokacin tururi mai ƙarancin matsin lamba (LP-MOVPE) na ƙarfe don haɓaka yadudduka na epitaxial da shirya na'urorin gano ƙwayoyin cuta na InGaAs MSM. Na'urar tana da babban amsawa na 0.42 A/W a tsawon tsayi na 1.3 μ m da kuma kwararar duhu ta ƙasa da 5.6 pA/μ m² a 1.5 V. A cikin 1996, masu bincike sun yi amfani da epitaxy na kwayoyin halitta na gas-phase (GSMBE) don haɓaka yadudduka na epitaxial na InAlAs InGaAs InP, waɗanda ke nuna halayen juriya mai yawa. An inganta yanayin girma ta hanyar ma'aunin diffraction na X-ray, wanda ya haifar da rashin daidaito tsakanin layukan InGaAs da InAlAs a cikin kewayon 1 × 10 ⁻ ³. Sakamakon haka, an inganta aikin na'urar, tare da kwararar duhu ƙasa da 0.75 pA/μ m² a 10 V da kuma amsawar gaggawa ta 16 ps a 5 V. Gabaɗaya, na'urar gano yanayin MSM tana da tsari mai sauƙi kuma mai sauƙin haɗawa, yana nuna ƙarancin kwararar duhu (matakin pA), amma na'urar lantarki ta ƙarfe tana rage ingantaccen yankin shan haske na na'urar, wanda ke haifar da ƙarancin amsawa idan aka kwatanta da sauran tsare-tsare.

Na'urar gano hoto ta PIN ta InGaAs tana da wani Layer na ciki da aka saka tsakanin layin hulɗar nau'in P da layin hulɗar nau'in N, kamar yadda aka nuna a cikin hoton, wanda ke ƙara faɗin yankin raguwar, ta haka yana haskaka ƙarin nau'ikan ramukan electron da kuma samar da babban hasken lantarki, don haka yana nuna kyakkyawan yanayin watsa wutar lantarki. A cikin 2007, masu bincike sun yi amfani da MBE don haɓaka layukan buffer masu ƙarancin zafin jiki, suna inganta ƙaiƙayin saman da kuma shawo kan rashin daidaiton layi tsakanin Si da InP. Sun haɗa tsarin PIN na InGaAs akan substrates na InP ta amfani da MOCVD, kuma amsawar na'urar ta kasance kusan 0.57 A/W. A cikin 2011, masu bincike sun yi amfani da na'urorin gano hoto na PIN don ƙirƙirar na'urar daukar hoto ta LiDAR mai gajeren zango don kewayawa, guje wa cikas/haɗari, da gano manufa/gane ƙananan motocin ƙasa marasa matuƙi. An haɗa na'urar da guntu mai ƙara microwave mai araha, wanda ke inganta rabon sigina zuwa hayaniya na na'urorin gano hoto na PIN na InGaAs sosai. A kan wannan dalili, a shekarar 2012, masu bincike sun yi amfani da wannan na'urar daukar hoton LiDAR a kan robot, tare da kewayon ganowa sama da mita 50 kuma ƙudurin ya karu zuwa 256 × 128.
Na'urar gano hasken dusar ƙanƙara ta InGaAs wani nau'in na'urar gano hasken rana ne tare da riba, kamar yadda aka nuna a cikin zane-zanen tsarin. Haɗin ramukan lantarki suna samun isasshen kuzari a ƙarƙashin aikin filin lantarki a cikin yankin ninki biyu, kuma suna karo da atom don samar da sabbin nau'ikan ramukan lantarki, suna samar da tasirin ambaliyar ruwa da ninka masu ɗaukar caji marasa daidaito a cikin kayan. A cikin 2013, masu bincike sun yi amfani da MBE don haɓaka haɗin InGaAs da InAlAs masu daidaituwa akan substrates na InP, suna daidaita kuzarin mai ɗaukar kaya ta hanyar canje-canje a cikin abun da ke ciki na gami, kauri na Layer epitaxial, da doping, suna haɓaka ionization na electroshock yayin rage ionization na rami. A ƙarƙashin ribar siginar fitarwa daidai, APD yana nuna ƙarancin hayaniya da ƙarancin hasken rana mai duhu. A cikin 2016, masu bincike sun gina dandamalin gwaji na laser mai aiki na 1570 nm bisa ga masu gano hasken dusar ƙanƙara ta InGaAs. Da'irar ciki tana'urar gano hoto ta APDAn karɓi ƙararrawa kuma an fitar da siginar dijital kai tsaye, wanda hakan ya sa dukkan na'urar ta yi ƙanƙanta. Sakamakon gwaji an nuna su a cikin Hotuna (d) da (e). Hoto (d) hoto ne na zahiri na abin da aka nufa na ɗaukar hoto, kuma Hoto (e) hoto ne mai nisan girma uku. Ana iya gani a sarari cewa yankin taga a Yankin C yana da tazara mai zurfi daga Yankuna A da B. Wannan dandamali yana cimma faɗin bugun jini ƙasa da 10 ns, kuzarin bugun jini ɗaya mai daidaitawa (1-3) mJ, kusurwar gani na 2 ° don ruwan tabarau mai watsawa da karɓa, ƙimar maimaitawa na 1 kHz, da zagayowar aikin ganowa na kusan 60%. Godiya ga samun hasken wutar lantarki na ciki, amsawa da sauri, ƙaramin girma, dorewa, da ƙarancin farashi na APD, masu gano hoto na APD na iya cimma ƙimar ganowa wanda ya fi na masu gano hoto na PIN girma ɗaya. Saboda haka, a halin yanzu babban radar laser galibi yana amfani da masu gano hoto na zaftarewar ƙasa.