Abstract: Tsarin asali da ka'idar aiki na avalanche photodetector (APD photodetector) an gabatar da su, ana nazarin tsarin juyin halitta na tsarin na'urar, an taƙaita matsayin bincike na yanzu, kuma ana nazarin ci gaban APD na gaba.
1. Gabatarwa
Photodetector na'ura ce da ke juyar da siginar haske zuwa siginar lantarki.A cikin asemiconductor photodetector, mai ɗaukar hoto wanda ke jin daɗin abin da ya faru photon ya shiga cikin kewayen waje a ƙarƙashin wutar lantarki da ake amfani da shi kuma ya samar da hoto mai aunawa.Ko da a iyakar amsawa, PIN photodiode zai iya samar da nau'i-nau'i-nau'i-nau'i-nau'i-nau'i ne kawai, wanda shine na'ura ba tare da riba ta ciki ba.Don ƙarin amsawa, ana iya amfani da avalanche photodiode (APD).Tasirin haɓakawa na APD akan photocurrent yana dogara ne akan tasirin karo na ionization.Ƙarƙashin wasu sharuɗɗa, ƙarfin lantarki da ramuka na iya samun isasshen kuzari don yin karo da lattice don samar da sabon nau'i-nau'i na ramukan lantarki.Wannan tsari wani nau'i ne na sarka, ta yadda nau'i-nau'i-nau'i-nau'i-nau'i-nau'i-nau'i-nau'i na lantarki da aka samar ta hanyar shayar da haske zai iya samar da adadi mai yawa na ramin electron kuma su samar da babban photocurrent na sakandare.Sabili da haka, APD yana da babban amsawa da riba na ciki, wanda ke inganta siginar-zuwa-amo na na'urar.APD za a fi amfani da shi a cikin dogon nesa ko ƙananan tsarin sadarwar fiber na gani tare da wasu iyakoki akan ƙarfin gani da aka karɓa.A halin yanzu, ƙwararrun na'urorin gani da yawa suna da kyakkyawan fata game da tsammanin APD, kuma sun yi imanin cewa binciken APD ya zama dole don haɓaka gasa ta ƙasa da ƙasa na fannoni masu alaƙa.
2. Fasaha ci gabandusar ƙanƙara mai daukar hoto(APD mai daukar hoto)
2.1 Kayayyaki
(1)Da photodetector
Si material Technology wata babbar fasaha ce da ake amfani da ita sosai a fannin microelectronics, amma ba ta dace da shirye-shiryen na'urori a cikin kewayon tsayin 1.31mm da 1.55mm waɗanda galibi ana yarda da su a fagen sadarwa na gani.
(2) Ge
Kodayake amsawar kallon Ge APD ya dace da buƙatun ƙarancin asara da ƙarancin tarwatsewa a cikin watsa fiber na gani, akwai matsaloli masu yawa a cikin tsarin shirye-shiryen.Bugu da kari, Ge's electron and hole ionization rate ratio yana kusa da () 1, don haka yana da wahala a shirya na'urorin APD masu inganci.
(3) In0.53Ga0.47As/InP
Hanya ce mai inganci don zaɓar In0.53Ga0.47As azaman layin ɗaukar haske na APD da InP azaman Layer mai ninka.Matsakaicin mafi girma na In0.53Ga0.47As abu shine 1.65mm, 1.31mm, 1.55mm tsayin raƙuman raƙuman raƙuman ruwa shine kusan 104cm-1 babban adadin sha, wanda shine kayan da aka fi so don ɗaukar Layer na mai gano haske a halin yanzu.
(4)InGaAs mai daukar hoto/Inmai daukar hoto
Ta zaɓar InGaAsP azaman Layer mai ɗaukar haske da InP azaman Layer mai ninka, APD tare da tsayin raƙuman amsawa na 1-1.4mm, ƙimar ƙimar ƙima, ƙaramin duhu mai duhu da babban riba mai yawa za a iya shirya.Ta hanyar zaɓar abubuwan haɗin gwal daban-daban, ana samun mafi kyawun aiki don takamaiman tsayin raƙuman ruwa.
(5)InGaAs/InAlAs
In0.52Al0.48Kamar yadda abu yana da ratar band (1.47eV) kuma baya sha a kewayon tsayin 1.55mm.Akwai shaida cewa bakin ciki In0.52Al0.48As epitaxial Layer na iya samun mafi kyawun halaye fiye da InP a matsayin Layer multiplicator a ƙarƙashin yanayin allurar lantarki mai tsabta.
(6)InGaAs/InGaAs (P) /InAlAs da InGaAs/In (Al) GaAs/InAlAs
Yawan tasirin ionization na kayan abu ne mai mahimmanci wanda ke shafar aikin APD.Sakamakon ya nuna cewa ana iya inganta ƙimar ionization na karo na Layer mai ninka ta hanyar gabatar da InGaAs (P) / InAlAs da In (Al) GaAs/InAlAs superlattice Tsarin.Ta amfani da tsarin superlattice, injin injin ɗin na iya sarrafa tashe-tashen hankulan asymmetric band ɓata tsakanin ƙungiyar gudanarwa da ƙimar valence band, kuma tabbatar da cewa katsewar band ɗin ya fi girma fiye da katsewar bandungiyar valence (ΔEc>> ΔEv).Idan aka kwatanta da kayan girma na InGaAs, InGaAs/InAlAs adadi da ƙimar ionization na lantarki (a) yana ƙaruwa sosai, kuma electrons da ramuka suna samun ƙarin kuzari.Saboda ΔEc>> ΔEv, ana iya sa ran cewa makamashin da aka samu ta hanyar lantarki yana ƙara yawan ionization na lantarki fiye da gudunmawar makamashin rami zuwa ramin ionization rate (b).Matsakaicin (k) na ƙimar ionization na lantarki zuwa ƙimar ionization rami yana ƙaruwa.Don haka, babban riba-bandwidth samfurin (GBW) da ƙarancin aikin amo ana iya samun su ta hanyar amfani da sifofi na superlatice.Koyaya, wannan InGaAs/InAlAs ƙayyadaddun tsarin rijiyar APD, wanda zai iya ƙara ƙimar k, yana da wahala a shafi masu karɓar gani.Wannan shi ne saboda maɗaukakin maɗaukaki wanda ke rinjayar iyakar amsawa yana iyakance ta wurin duhu mai duhu, ba amo mai yawa ba.A cikin wannan tsari, duhu halin yanzu yana faruwa ne ta hanyar tasirin tunneling na InGaAs mai kyau tare da kunkuntar band rata, don haka gabatar da wani faffadan rata quaternary gami, kamar InGaAsP ko InAlGaAs, maimakon InGaAs a matsayin rijiyar Layer. na tsarin rijiyar quantum na iya murkushe duhun halin yanzu.
Lokacin aikawa: Nuwamba-13-2023