Takaitaccen Bayani: Tsarin asali da ƙa'idar aiki na na'urar gano zaftarewar dusar ƙanƙara (Avalanche photodetector)na'urar gano hoto ta APD) an gabatar da su, an yi nazarin tsarin juyin halitta na tsarin na'urar, an taƙaita matsayin bincike na yanzu, sannan a yi nazarin ci gaban APD na gaba.
1. Gabatarwa
Na'urar gano haske (photodetector) na'ura ce da ke canza siginar haske zuwa siginar lantarki.na'urar gano hoto ta semiconductor, mai ɗaukar hoto wanda abin ya faru da photon ya haifar yana shiga da'irar waje a ƙarƙashin ƙarfin lantarki mai bias kuma yana samar da hasken lantarki mai aunawa. Ko da a matsakaicin amsawa, hasken photodiode na PIN zai iya samar da nau'ikan ramin electron guda biyu ne kawai, wanda shine na'ura ba tare da riba ta ciki ba. Don ƙarin amsawa, ana iya amfani da hasken photodiode mai zaftarewa (APD). Tasirin haɓakawa na APD akan hasken photocurrent ya dogara ne akan tasirin karo na ionization. A ƙarƙashin wasu yanayi, electrons masu sauri da ramuka na iya samun isasshen kuzari don karo da layin don samar da sabbin nau'ikan ramin electron. Wannan tsari shine amsawar sarka, don haka nau'ikan ramin electron guda biyu da aka samar ta hanyar shayewar haske na iya samar da adadi mai yawa na ramin electron da kuma samar da babban hasken photocurrent na biyu. Saboda haka, APD yana da babban amsawa da riba ta ciki, wanda ke inganta rabon sigina zuwa hayaniya na na'urar. Za a yi amfani da APD galibi a cikin tsarin sadarwa na fiber na gani mai nisa ko ƙananan tare da wasu ƙuntatawa akan ƙarfin gani da aka karɓa. A halin yanzu, kwararru da yawa na na'urorin gani suna da kyakkyawan fata game da yiwuwar APD, kuma suna ganin cewa binciken APD ya zama dole don haɓaka gasa a duniya na fannoni masu alaƙa.
2. Ci gaban fasaha nana'urar gano ambaliyar ruwa(Mai gano hoto na APD)
2.1 Kayan Aiki
(1)Si na'urar gano hoto
Fasahar kayan Si fasaha ce mai girma wadda ake amfani da ita sosai a fannin microelectronics, amma ba ta dace da shirya na'urori a cikin kewayon tsawon rai na 1.31mm da 1.55mm waɗanda aka yarda da su gabaɗaya a fannin sadarwa ta gani ba.
(2) Ge
Duk da cewa martanin spectral na Ge APD ya dace da buƙatun ƙarancin asara da ƙarancin watsawa a cikin watsa fiber na gani, akwai manyan matsaloli a cikin tsarin shiri. Bugu da ƙari, rabon ionization na electron da rami na Ge yana kusa da () 1, don haka yana da wuya a shirya na'urorin APD masu aiki mai kyau.
(3)In0.53Ga0.47As/InP
Hanya ce mai inganci don zaɓar In0.53Ga0.47As a matsayin Layer na shaye-shaye na APD da InP a matsayin Layer mai ninkawa. Kololuwar shaye-shaye na kayan In0.53Ga0.47As shine 1.65mm, tsawon 1.31mm, 1.55mm yana da kusan 104cm-1 high absorption coefficient, wanda shine kayan da aka fi so don Layer na shaye-shaye na na'urar gano haske a halin yanzu.
(4)na'urar gano hoto ta InGaAs/A cikinna'urar gano hoto
Ta hanyar zaɓar InGaAsP a matsayin layin ɗaukar haske da InP a matsayin layin ninkawa, ana iya shirya APD mai tsawon amsawa na 1-1.4mm, ingantaccen aiki na quantum, ƙarancin kwararar duhu da kuma yawan kwararar zaftarewar ƙasa. Ta hanyar zaɓar sassan ƙarfe daban-daban, ana samun mafi kyawun aiki don takamaiman raƙuman ruwa.
(5)InGaAs/InAlAs
In0.52Al0.48Kamar yadda kayan ke da tazara mai madauri (1.47eV) kuma baya sha a tsawon tsawon zango na 1.55mm. Akwai shaida cewa siririn Layer na In0.52Al0.48As na epitaxial zai iya samun ingantattun halaye na riba fiye da InP a matsayin Layer mai ninkawa a ƙarƙashin yanayin allurar lantarki mai tsabta.
(6)InGaAs/InGaAs (P) /InAlAs da InGaAs/In (Al) GaAs/InAlAs
Yawan tasirin ionization na kayan abu muhimmin abu ne da ke shafar aikin APD. Sakamakon ya nuna cewa za a iya inganta yawan karo na ionization na Layer mai ninka ta hanyar gabatar da tsarin InGaAs (P) /InAlAs da In (Al) GaAs/InAlAs superlattice. Ta hanyar amfani da tsarin superlattice, injiniyan band zai iya sarrafa rashin daidaituwar gefen band mara daidaituwa tsakanin band mai gudanarwa da ƙimar band mai valence, da kuma tabbatar da cewa rashin daidaituwar band mai gudanarwa ya fi girma fiye da rashin daidaituwar band mai valence (ΔEc>>ΔEv). Idan aka kwatanta da kayan babban InGaAs, yawan ionization na electron mai kyau na InGaAs/InAlAs (a) yana ƙaruwa sosai, kuma electrons da ramuka suna samun ƙarin kuzari. Saboda ΔEc>>ΔEv, ana iya tsammanin cewa kuzarin da electrons ke samu yana ƙara yawan ionization na electron fiye da gudummawar kuzarin rami zuwa ƙimar ionization na rami (b). Rabo (k) na ƙimar ionization na electron zuwa ƙimar ionization na rami yana ƙaruwa. Saboda haka, ana iya samun samfurin babban riba-bandwidth (GBW) da ƙarancin aikin amo ta hanyar amfani da tsarin superlattice. Duk da haka, wannan tsarin rijiyar quantum na InGaAs/InAlAs APD, wanda zai iya ƙara ƙimar k, yana da wuya a shafa wa masu karɓar haske. Wannan saboda abin da ke shafar matsakaicin amsawa yana iyakance ta hanyar hasken duhu, ba hayaniyar mai yawa ba. A cikin wannan tsari, hasken duhu galibi yana faruwa ne ta hanyar tasirin rami na layin rijiyar InGaAs tare da kunkuntar rata, don haka gabatar da ƙarfe mai faɗi-band gap quaternary, kamar InGaAsP ko InAlGaAs, maimakon InGaAs a matsayin layin rijiyar tsarin rijiyar quantum zai iya danne hasken duhu.
Lokacin Saƙo: Nuwamba-13-2023