Tsarin InGaAs mai daukar hoto

TsarinInGaAs mai daukar hoto

Tun daga shekarun 1980, masu bincike a gida da waje sun yi nazarin tsarin InGaAs photodetectors, wanda aka raba zuwa nau'i uku. Su ne InGaAs karfe-Semiconductor-metal photodetector (MSM-PD), InGaAs PIN Photodetector (PIN-PD), da InGaAs Avalanche Photodetector (APD-PD). Akwai bambance-bambance masu mahimmanci a cikin tsarin ƙirƙira da farashin InGaAs masu daukar hoto tare da sifofi daban-daban, kuma akwai kuma babban bambance-bambance a cikin aikin na'urar.

InGaAs karfe-semiconductor-karfemai daukar hoto, wanda aka nuna a cikin Hoto (a), wani tsari ne na musamman wanda ya dogara da haɗin Schottky. A cikin 1992, Shi et al. An yi amfani da ƙananan ƙarfin ƙarfe-kwayoyin tururi zamani fasahar epitaxy (LP-MOVPE) don girma epitaxy yadudduka da kuma shirya InGaAs MSM photodetector, wanda yana da babban amsawa na 0.42 A / W a tsawon 1.3 μm da duhu halin yanzu ƙasa da 5.6 pA/ μm² a 1.5 V. A cikin 1996, zhang et al. An yi amfani da lokacin iskar gas na ƙwayoyin katako na katako (GSMBE) don haɓaka Layer epitaxy InAlAs-InGaAs-InP. Layer na InAlAs ya nuna halayen juriya mai girma, kuma an inganta yanayin girma ta hanyar ma'aunin raɗaɗi na X-ray, ta yadda rashin daidaituwa tsakanin InGaAs da InAlAs ya kasance tsakanin kewayon 1 × 10⁻³. Wannan yana haifar da ingantaccen aikin na'urar tare da halin yanzu mai duhu a ƙasa 0.75 pA/μm² a 10 V da saurin amsawa na wucin gadi har zuwa 16 ps a 5 V. Gabaɗaya, tsarin hoto na MSM yana da sauƙi kuma mai sauƙin haɗawa, yana nuna ƙarancin halin yanzu duhu (pA). oda), amma ƙarfe na lantarki zai rage tasirin tasirin haske na na'urar, don haka amsa ya yi ƙasa da sauran sifofi.

InGaAs PIN photodetector yana shigar da wani Layer na ciki tsakanin nau'in lamba P-type da N-type lamba Layer, kamar yadda aka nuna a cikin Hoto (b), wanda ke ƙara faɗin yanki na raguwa, don haka yana haskaka ƙarin nau'i-nau'i-rami na lantarki da samar da ya fi girma photocurrent, don haka yana da kyakkyawan aikin gudanarwa na lantarki. A cikin 2007, A.Poloczek et al. ya yi amfani da MBE don haɓaka ƙwanƙolin ƙaramin zafin jiki don haɓaka ƙaƙƙarfan yanayi da shawo kan rashin daidaituwa tsakanin Si da InP. An yi amfani da MOCVD don haɗa tsarin InGaAs PIN akan ma'aunin InP, kuma amsawar na'urar kusan 0.57A/W. A cikin 2011, Cibiyar Binciken Sojoji (ALR) ta yi amfani da na'urorin daukar hoto na PIN don yin nazarin hoton liDAR don kewayawa, hanawa / guje wa karo, da ganowa / ganowa na gajeren zango don ƙananan motocin ƙasa marasa matuƙa, haɗe tare da guntun amplifier microwave mai rahusa. mahimmanci ya inganta siginar-zuwa-amo na InGaAs PIN photodetector. A kan wannan, a cikin 2012, ALR ta yi amfani da wannan hoton liDAR don mutummutumi, tare da kewayon ganowa sama da 50m da ƙuduri na 256 × 128.

InGaAsdusar ƙanƙara mai daukar hotowani nau'i ne na photodetector tare da riba, wanda aka nuna tsarinsa a cikin Hoto (c). Biyu-rami na lantarki suna samun isasshen kuzari ƙarƙashin aikin filin lantarki a cikin yanki mai ninka biyu, ta yadda za su yi karo da zarra, su haifar da sabon ramin electron-rami, haifar da tasirin dusar ƙanƙara, da kuma ninka masu ɗaukar kaya marasa daidaituwa a cikin kayan. . A cikin 2013, George M ya yi amfani da MBE don girma lattice wanda ya dace da InGaAs da InAlAs alloys akan wani InP substrate, ta yin amfani da canje-canje a cikin abun da ke ciki na gami, kauri na epitaxial, da doping zuwa makamashi mai ɗaukar nauyi don haɓaka ionization electroshock yayin da rage girman ionization rami. A daidai ƙimar siginar fitarwa, APD yana nuna ƙaramar amo da ƙaramin duhu. A cikin 2016, Sun Jianfeng et al. gina saitin 1570 nm Laser aiki na gwajin dandali na gwaji bisa ga InGaAs avalanche photodetector. Da'irar ciki naAPD photodetectorsami echoes da kuma fitar da sigina na dijital kai tsaye, yana mai da na'urar gabaɗaya. Ana nuna sakamakon gwajin a FIG. (d) da (e). Hoto (d) hoto ne na zahiri na makasudin hoto, kuma Hoto (e) hoto ne mai nisa mai girma uku. Ana iya gani a fili cewa yankin taga na yanki c yana da takamaiman nisa mai zurfi tare da yanki A da b. Dandali yana gane nisa bugun jini ƙasa da 10 ns, ƙarfin bugun jini guda ɗaya (1 ~ 3) mJ daidaitacce, karɓar filin ruwan tabarau Angle na 2°, maimaita maimaitawar 1 kHz, aikin ganowa na kusan 60%. Godiya ga ribar hoto na cikin gida na APD, saurin amsawa, ƙaƙƙarfan girman, dorewa da ƙarancin farashi, APD photodetectors na iya zama tsari mafi girma a ƙimar ganowa fiye da na'urar gano hoto na PIN, don haka liDAR na yau da kullun yana mamaye manyan abubuwan gano hoto.

Gabaɗaya, tare da saurin haɓaka fasahar shirye-shiryen InGaAs a gida da waje, za mu iya yin amfani da fasaha ta MBE, MOCVD, LPE da sauran fasahohi don shirya babban yanki mai inganci InGaAs epitaxial Layer akan InP substrate. InGaAs photodetectors suna nuna ƙarancin halin yanzu mai duhu da babban amsawa, mafi ƙarancin halin yanzu yana ƙasa da 0.75 pA/μm², matsakaicin amsawa ya kai 0.57 A/W, kuma yana da amsa mai saurin wucewa (tsarin ps). Ci gaban InGaAs photodetectors na gaba zai mayar da hankali kan abubuwa biyu masu zuwa: (1) InGaAs epitaxial Layer yana girma kai tsaye akan Si substrate. A halin yanzu, yawancin na'urorin microelectronic a kasuwa suna tushen Si, kuma haɓakar haɓakar InGaAs da Si ta gaba shine yanayin gaba ɗaya. Magance matsaloli irin su rashin daidaituwa na lattice da bambancin haɓaka haɓakawar thermal yana da mahimmanci don nazarin InGaAs / Si; (2) Fasahar tsayin igiyar 1550nm ta kasance balagagge, kuma tsayin tsayin tsayin daka (2.0 ~ 2.5) μm shine jagorar bincike na gaba. Tare da haɓakar A cikin abubuwan da aka gyara, rashin daidaituwa tsakanin inP substrate da InGaAs epitaxial Layer zai haifar da mummunan lalacewa da lahani, don haka ya zama dole don inganta sigogin tsarin na'urar, rage lahani na lattice, da rage na'urar duhu halin yanzu.