Tsarin na'urar gano hoto ta InGaAs

Tsarinna'urar gano hoto ta InGaAs

Tun daga shekarun 1980, masu bincike a gida da waje sun yi nazarin tsarin na'urorin gano ƙwayoyin cuta na InGaAs, waɗanda galibi aka raba su zuwa nau'i uku. Su ne na'urar gano ƙwayoyin cuta ta ƙarfe-Semiconductor-ƙarfe ta InGaAs (MSM-PD), na'urar gano ƙwayoyin cuta ta PIN ta InGaAs (PIN-PD), da na'urar gano ƙwayoyin cuta ta InGaAs (APD-PD). Akwai manyan bambance-bambance a cikin tsarin ƙera da farashin na'urorin gano ƙwayoyin cuta na InGaAs masu tsari daban-daban, kuma akwai manyan bambance-bambance a cikin aikin na'ura.

Karfe-Semiconductor-ƙarfe na InGaAsna'urar gano hoto, wanda aka nuna a Hoto (a), wani tsari ne na musamman wanda ya dogara da mahaɗin Schottky. A cikin 1992, Shi da abokan aikinsa sun yi amfani da fasahar epitaxy na ƙarfe mai ƙarancin matsin lamba (LP-MOVPE) don haɓaka yadudduka na epitaxy kuma sun shirya na'urar gano hoto ta InGaAs MSM, wanda ke da babban amsawar A na 0.42 A/W a tsawon tsayin 1.3 μm da kuma hasken rana mai duhu ƙasa da 5.6 pA/ μm² a 1.5 V. A cikin 1996, zhang da abokan aikinsa sun yi amfani da epitaxy na hasken gas (GSMBE) don haɓaka layin epitaxy na InAlAs-InGaAs-InP. Layer na InAlAs ya nuna halayen juriya masu yawa, kuma an inganta yanayin girma ta hanyar auna bambancin X-ray, don haka rashin daidaito tsakanin layukan InGaAs da InAlAs ya kasance cikin kewayon 1×10⁻³. Wannan yana haifar da ingantaccen aikin na'urar tare da hasken rana mai duhu ƙasa da 0.75 pA/μm² a 10 V da kuma saurin amsawar wucin gadi har zuwa 16 ps a 5 V. Gabaɗaya, na'urar gano tsarin MSM mai sauƙi ce kuma mai sauƙin haɗawa, tana nuna ƙarancin hasken rana mai duhu (tsarin pA), amma na'urar lantarki ta ƙarfe za ta rage ingantaccen yankin shan haske na na'urar, don haka martanin ya yi ƙasa da sauran tsare-tsare.

Mai gano hoto na InGaAs PIN yana saka wani Layer na ciki tsakanin layin hulɗa na nau'in P da layin hulɗa na nau'in N, kamar yadda aka nuna a Hoto na (b), wanda ke ƙara faɗin yankin raguwar, don haka yana haskaka ƙarin nau'ikan ramuka na electron da kuma samar da babban hasken lantarki, don haka yana da kyakkyawan aikin watsa wutar lantarki. A cikin 2007, A.Poloczek et al. sun yi amfani da MBE don haɓaka ƙaramin Layer mai kariya don inganta ƙaiƙayin saman da kuma shawo kan rashin daidaiton layin tsakanin Si da InP. An yi amfani da MOCVD don haɗa tsarin PIN na InGaAs akan substrate na InP, kuma amsawar na'urar ta kasance kusan 0.57A /W. A cikin 2011, Dakin Bincike na Sojoji (ALR) ya yi amfani da masu gano hoto na PIN don nazarin hoton liDAR don kewayawa, guje wa cikas/haɗari, da gano/gano manufa ta ɗan gajeren zango ga ƙananan motocin ƙasa marasa matuƙi, wanda aka haɗa shi da guntu mai ƙara microwave mai araha wanda ya inganta rabon sigina zuwa hayaniya na mai gano hoto na PIN na InGaAs. A kan wannan tushen, a cikin 2012, ALR ta yi amfani da wannan hoton liDAR don robots, tare da kewayon ganowa sama da m 50 da ƙudurin 256 × 128.

InGaAsna'urar gano ambaliyar ruwawani nau'in na'urar gano haske ne mai riba, wanda aka nuna tsarinsa a Hoto (c). Haɗin ramin electron yana samun isasshen kuzari a ƙarƙashin aikin filin lantarki a cikin yankin mai ninki biyu, don yin karo da atom, samar da sabbin nau'ikan ramin electron, samar da tasirin zaftarewar ƙasa, da kuma ninka masu ɗaukar kayan da ba su daidaita ba a cikin kayan. A cikin 2013, George M ya yi amfani da MBE don haɓaka gami da InGaAs da InAlAs masu daidaitawa akan wani substrate na InP, ta amfani da canje-canje a cikin abun da ke ciki na gami, kauri na Layer epitaxial, da kuma doping zuwa makamashin mai ɗaukar kaya da aka daidaita don haɓaka ionization na electroshock yayin rage ionization na rami. A daidai ribar siginar fitarwa, APD yana nuna ƙarancin hayaniya da ƙarancin hasken rana mai duhu. A cikin 2016, Sun Jianfeng et al. sun gina saitin dandamalin gwaji na laser mai aiki na 1570 nm bisa ga na'urar gano haske na InGaAs. Da'irar ciki tana'urar gano hoto ta APDAn karɓi ƙararrawa kuma an fitar da siginar dijital kai tsaye, wanda hakan ya sa dukkan na'urar ta yi ƙanƙanta. Sakamakon gwaji an nuna su a cikin Hoto na (d) da (e). Hoto na (d) hoto ne na zahiri na abin da aka nufa na ɗaukar hoto, kuma Hoto na (e) hoto ne mai nisan girma uku. Ana iya gani a sarari cewa yankin taga na yankin c yana da tazara mai zurfi tare da yanki na A da b. Dandalin yana gano faɗin bugun jini ƙasa da 10 ns, kuzarin bugun jini ɗaya (1 ~ 3) mJ mai daidaitawa, filin ruwan tabarau mai karɓa Kusurwar 2°, mitar maimaitawa na 1 kHz, rabon aikin ganowa na kusan 60%. Godiya ga ribar hasken wutar lantarki ta ciki ta APD, amsawar sauri, ƙaramin girma, dorewa da ƙarancin farashi, masu gano hoto na APD na iya zama tsari na girma mafi girma a cikin ƙimar ganowa fiye da masu gano hoto na PIN, don haka babban liDAR na yanzu galibi yana mamaye masu gano hoto na zaftarewar dusar ƙanƙara.

Gabaɗaya, tare da saurin haɓaka fasahar shirya InGaAs a gida da waje, za mu iya amfani da fasahar MBE, MOCVD, LPE da sauran fasahohi da kyau don shirya babban yanki mai inganci na InGaAs epitaxial Layer akan substrate na InP. Masu gano hoto na InGaAs suna nuna ƙarancin hasken rana mai duhu da babban amsawa, mafi ƙarancin hasken rana mai duhu yana ƙasa da 0.75 pA/μm², matsakaicin amsawa har zuwa 0.57 A/W, kuma yana da saurin amsawa na ɗan lokaci (tsarin ps). Ci gaban masu gano hoto na InGaAs nan gaba zai mayar da hankali kan waɗannan fannoni biyu: (1) Layer epitaxial Layer na InGaAs ana girma kai tsaye akan substrate na Si. A halin yanzu, yawancin na'urorin lantarki na microelectronic a kasuwa suna tushen Si ne, kuma ci gaban haɗin gwiwa na InGaAs da Si shine yanayin gabaɗaya. Magance matsaloli kamar rashin daidaituwa tsakanin lattice da bambancin faɗaɗa zafi yana da mahimmanci don nazarin InGaAs/Si; (2) Fasahar tsawon tsayin 1550 nm ta girma, kuma tsawaita tsawon tsayin (2.0 ~ 2.5) μm shine alkiblar bincike a nan gaba. Tare da ƙaruwar sassan In, rashin daidaito tsakanin layin InP da layin epitaxial na InGaAs zai haifar da mummunan lalacewa da lahani, don haka ya zama dole a inganta sigogin tsarin na'urar, rage lahani na layin, da rage hasken wutar lantarki mai duhu na na'urar.