Na'urar gano hoto mai ɗaukar hoto ɗaya ta karya ƙa'idar aiki ta 80%

Mai gano hoton photon guda ɗayasun karya matsalar inganci ta kashi 80%

Mai-photon guda ɗayana'urar gano hotoana amfani da su sosai a fannin fasahar kwantum photonics da kuma daukar hoton photon guda ɗaya saboda fa'idodinsu masu sauƙi da rahusa, amma suna fuskantar waɗannan matsaloli na fasaha.

Iyakokin fasaha na yanzu

1.CMOS da SPAD mai sirara: Duk da cewa suna da haɗin kai mai yawa da ƙarancin jitter na lokaci, layin sha yana da siriri (ƙananan micrometers), kuma PDE yana da iyaka a yankin kusa da infrared, tare da kusan kashi 32% kawai a 850 nm.

2. SPAD mai kauri: Yana da kauri mai kauri na micrometer goma. Kayayyakin kasuwanci suna da PDE na kusan 70% a 780 nm, amma karyewa ta hanyar 80% yana da matuƙar ƙalubale.

3. Karanta iyakokin da'ira: SPAD mai kauri yana buƙatar ƙarfin lantarki mai wuce gona da iri fiye da 30V don tabbatar da yuwuwar ambaliyar ruwa mai yawa. Ko da tare da ƙarfin lantarki mai kashewa na 68V a cikin da'irori na gargajiya, ana iya ƙara PDE zuwa 75.1%.

Mafita

Inganta tsarin semiconductor na SPAD. Tsarin da aka haskaka a baya: Photons da suka faru suna lalacewa sosai a cikin silicon. Tsarin da aka haskaka a baya yana tabbatar da cewa yawancin photons suna sha a cikin layin sha, kuma electrons da aka samar ana allurar su cikin yankin zaftarewar ƙasa. Saboda ƙimar ionization na electrons a cikin silicon ya fi na ramuka girma, allurar electron tana ba da damar zaftarewar ƙasa mafi girma. Yankin zaftarewar ƙasa na diyya ga doping: Ta hanyar amfani da tsarin yaɗuwar boron da phosphorus akai-akai, ana rama doping mara zurfi don tattara filin lantarki a cikin yankin mai zurfi tare da ƙarancin lahani na lu'ulu'u, wanda hakan ke rage hayaniya kamar DCR.

2. Da'irar karantawa mai inganci. Ƙarfin iko mai girma na 50V Saurin yanayi; Aikin multimodal: Ta hanyar haɗa siginar sarrafa FPGA QUENCHING da RESET, ana samun sauƙin sauyawa tsakanin aiki kyauta (mai kunna sigina), gate (drive na waje na GATE), da kuma yanayin haɗin gwiwa.

3. Shirya na'ura da marufi. An yi amfani da tsarin SPAD wafer, tare da fakitin malam buɗe ido. Ana haɗa SPAD da substrate mai ɗaukar AlN kuma an sanya shi a tsaye akan mai sanyaya thermoelectric (TEC), kuma ana samun ikon sarrafa zafin jiki ta hanyar thermistor. Zaruruwan gani na multimode suna daidaita daidai da cibiyar SPAD don cimma haɗin kai mai inganci.

4. Daidaita Aiki. An gudanar da daidaitawa ta amfani da diode na laser mai ƙarfin picosecond 785 nm (100 kHz) da kuma mai canza lokaci-dijital (TDC, ƙudurin 10 ps).

Takaitaccen Bayani

Ta hanyar inganta tsarin SPAD (mahadar kauri, hasken baya, diyya ta doping) da kuma sabunta da'irar kashe wutar lantarki ta 50 V, wannan binciken ya yi nasarar tura PDE na na'urar gano haske ta photon guda ɗaya da aka yi da silicon zuwa sabon tsayi na 84.4%. Idan aka kwatanta da kayayyakin kasuwanci, an inganta cikakken aikinta sosai, yana samar da mafita masu amfani ga aikace-aikace kamar sadarwa ta quantum, lissafin quantum, da kuma hoton haske mai ƙarfi wanda ke buƙatar aiki mai ƙarfi da sassauƙa. Wannan aikin ya kafa harsashi mai ƙarfi don ci gaba da haɓaka fasahar siliconna'urar gano photon guda ɗayafasaha.