Na'urar gano hoto guda ɗaya ta karye ta hanyar ƙwanƙwasa 80% na inganci

Mai daukar hoto guda dayasun karya ta hanyar 80% na ingantaccen aiki

Hoto guda ɗayamai daukar hotoana amfani da su sosai a fagage na quantum photonics da hoton hoto guda ɗaya saboda ƙaƙƙarfan fa'idarsu da rahusa, amma suna fuskantar matsaloli na fasaha masu zuwa.

Iyakokin fasaha na yanzu

1.CMOS da bakin ciki-junction SPAD: Ko da yake suna da babban haɗin kai da ƙananan lokaci jitter, shayarwa mai laushi yana da bakin ciki ('yan micrometers), kuma PDE yana iyakance a cikin yankin da ke kusa da infrared, tare da kusan 32% kawai a 850 nm.

2. Kauri-junction SPAD: Yana siffofi da wani sha Layer dubun micrometers kauri. Kayayyakin kasuwanci suna da PDE na kusan 70% a 780 nm, amma karya ta hanyar 80% yana da ƙalubale sosai.

3. Karanta iyakokin kewayawa: SPAD mai kauri-junction yana buƙatar ƙarfin lantarki fiye da 30V don tabbatar da yuwuwar yuwuwar dusar ƙanƙara. Ko da tare da ƙarancin wutar lantarki na 68V a cikin da'irori na gargajiya, PDE kawai za a iya ƙara zuwa 75.1%.

Magani

Inganta tsarin semiconductor na SPAD. Zane mai haske na baya: Abubuwan da suka faru na photons sun lalace sosai a cikin silicon. Tsarin da aka haskaka baya yana tabbatar da cewa yawancin photons suna nutsewa a cikin Layer na sha, kuma ana shigar da electrons da aka samar a cikin yankin avalanche. Saboda yawan ionization na electrons a cikin siliki ya fi na ramuka, allurar lantarki tana ba da babbar yuwuwar dusar ƙanƙara. Doping ramuwa yankin kankara: Ta hanyar amfani da ci gaba da yaduwa tsarin na boron da phosphorus, m doping ana samun diyya don mayar da hankali filin lantarki a cikin zurfin yankin tare da 'yan crystal lahani, yadda ya kamata rage amo kamar DCR.

2. High-performance readout kewaye. 50V high amplitude quenching Saurin yanayin canji; Aiki na Multimodal: Ta hanyar haɗa siginar QUENCHING na sarrafa FPGA da SAKETA, ana samun sassauƙan sauyawa tsakanin aiki kyauta (siginar siginar), gating (drive na waje na GATE), da hanyoyin haɗin gwiwa.

3. Shirye-shiryen na'urar da marufi. An karɓi tsarin wafer na SPAD, tare da fakitin malam buɗe ido. An haɗe SPAD zuwa ma'aunin jigilar AlN kuma an sanya shi a tsaye akan na'urar sanyaya thermoelectric (TEC), kuma ana samun ikon sarrafa zafin jiki ta hanyar thermistor. Multimode Optical fibers an daidaita su daidai da cibiyar SPAD don cimma ingantaccen haɗin gwiwa.

4. Gyaran aiki. An gudanar da gyare-gyare ta hanyar amfani da diode laser picosecond 785 nm (100 kHz) da mai sauya lokaci-dijital (TDC, 10 ps ƙuduri).

Takaitawa

Ta hanyar inganta tsarin SPAD (kauri mai kauri, baya-haske, diyya na doping) da haɓaka da'irar 50 V quenching, wannan binciken ya sami nasarar tura PDE na mai gano hoto guda ɗaya na silicon zuwa sabon tsayi na 84.4%. Idan aka kwatanta da samfuran kasuwanci, ingantaccen aikin sa an inganta shi sosai, yana ba da mafita mai amfani don aikace-aikace kamar sadarwa ta ƙididdigewa, ƙididdige ƙididdigewa, da hoto mai mahimmanci wanda ke buƙatar ingantaccen aiki mai ƙarfi da sassauƙa. Wannan aikin ya kafa tushe mai ƙarfi don ci gaba da haɓaka tushen siliconmai gano hoto guda ɗayafasaha.