Silicon photonics mai aiki kashi

Silicon photonics mai aiki kashi

Abubuwan da ke aiki na Photonics suna nuni musamman ga ƙera ma'amala mai ƙarfi tsakanin haske da kwayoyin halitta da gangan. Wani nau'i na musamman mai aiki na photonics shine na'urar modulator. Duk tushen silicon na yanzuna gani modulatorssun dogara ne akan tasirin mai ɗauka na kyauta na plasma. Canza adadin electrons na kyauta da ramuka a cikin kayan silicon ta hanyar doping, lantarki ko hanyoyin gani na iya canza hadadden ma'anar refractive, tsarin da aka nuna a cikin ma'auni (1,2) wanda aka samu ta hanyar daidaita bayanai daga Soref da Bennett a tsawon nanometer 1550 . Idan aka kwatanta da electrons, ramukan suna haifar da babban rabo na ainihin sauye-sauye na sauye-sauye na ainihi da na tunanin, wato, za su iya samar da babban canji na lokaci don canjin asarar da aka ba, don haka a cikinMach-Zehnder masu haɓakawada masu gyara zobe, yawanci an fi son yin amfani da ramuka don yinlokaci masu daidaitawa.

Daban-dabansilicon (Si) modulatorana nuna nau'ikan a cikin Hoto na 10A. A cikin modulator allura mai ɗaukar hoto, haske yana cikin siliki na asali a cikin madaidaicin fil mai faɗi sosai, kuma ana allurar electrons da ramuka. Duk da haka, irin waɗannan na'urori suna da hankali, yawanci tare da bandwidth na 500 MHz, saboda free electrons da ramukan suna ɗaukar lokaci mai tsawo don sake haɗuwa bayan allura. Sabili da haka, ana amfani da wannan tsarin a matsayin mai canzawa na gani attenuator (VOA) maimakon modulator. A cikin na'ura mai ɗaukar nauyi mai ɗaukar nauyi, ɓangaren haske yana cikin madaidaicin pn, kuma ana canza raguwar nisa na mahaɗin pn ta hanyar lantarki da aka yi amfani da shi. Wannan na'ura na'ura na iya aiki da sauri fiye da 50Gb/s, amma yana da babban asarar shigar baya. Matsakaicin vpil shine 2 V-cm. Ƙarfe oxide semiconductor (MOS) (ainihin semiconductor-oxide-semiconductor) modulator yana ƙunshe da bakin ciki oxide Layer a cikin haɗin pn. Yana ba da damar wasu tarawar jigilar kaya da kuma raguwar dillali, yana ba da damar ƙaramin VπL na kusan 0.2 V-cm, amma yana da lahani na hasara mafi girma da ƙarfin ƙarfin kowane tsayin raka'a. Bugu da kari, akwai SiGe na'ura mai sarrafa wutar lantarki dangane da SiGe (silicon Germanium alloy) motsi gefen gefe. Bugu da kari, akwai graphene modulators da suka dogara da graphene don canzawa tsakanin shafe karafa da kuma m insulators. Waɗannan suna nuna nau'ikan aikace-aikace na hanyoyi daban-daban don cimma babban sauri, ƙarancin hasarar siginar siginar gani.

Hoto na 10: (A) Zane-zane na ƙetaren ƙira daban-daban na ƙirar ƙirar ƙirar siliki na tushen siliki da (B) zane-zanen ƙirar ƙirar gani.

Ana nuna wasu na'urorin gano haske na tushen silicon a hoto na 10B. Abun da ake ɗauka shine germanium (Ge). Ge yana iya ɗaukar haske a tsawon magudanar ruwa zuwa kusan microns 1.6. Wanda aka nuna akan hagu shine mafi kyawun tsarin fil ɗin kasuwanci a yau. Ya ƙunshi nau'in siliki na nau'in P-doped wanda Ge ke tsiro akansa. Ge da Si suna da rashin daidaituwa na 4% na lattice, kuma don rage rarrabuwar kawuna, an fara girma ƙaramin Layer na SiGe a matsayin madaidaicin buffer. Ana yin nau'in doping na nau'in N a saman Ge Layer. Ana nuna photodiode na karfe-semiconductor-metal (MSM) a tsakiya, da kuma APD (Avalanche Photodetector) an nuna shi a hannun dama. Yankin dusar ƙanƙara a cikin APD yana cikin Si, wanda ke da ƙananan halayen amo idan aka kwatanta da yankin dusar ƙanƙara a cikin kayan farko na rukuni na III-V.

A halin yanzu, babu mafita tare da fa'idodin fa'ida a cikin haɗar fa'idar gani tare da silicon photonics. Hoto na 11 yana nuna zaɓuɓɓuka masu yiwuwa da yawa da aka tsara ta matakin taro. A gefen hagu mai nisa akwai haɗin gwiwar monolithic wanda ya haɗa da amfani da germanium mai girma na epitaxially (Ge) azaman kayan samun kayan gani, erbium-doped (Er) gilashin raƙuman ruwa (kamar Al2O3, wanda ke buƙatar famfo na gani), da gallium arsenide mai girma (GaAs). ) dige ƙididdiga. Shafi na gaba shine wafer zuwa taron wafer, wanda ya haɗa da oxide da haɗin gwiwar kwayoyin halitta a cikin yankin riba na rukuni na III-V. Shafi na gaba shine taron guntu-zuwa-wafer, wanda ya haɗa da haɗa guntu na III-V a cikin rami na wafer silicon sannan kuma sarrafa tsarin waveguide. Amfanin wannan hanyar shafi uku na farko shine cewa na'urar za ta iya gwada cikakkiyar aiki a cikin wafer kafin yanke. Babban ginshiƙi na dama shine taron guntu-zuwa-guntu, gami da haɗa kai tsaye na kwakwalwan siliki zuwa guntuwar rukuni na III-V, da kuma haɗawa ta hanyar ruwan tabarau da ma'auratan grating. Halin zuwa aikace-aikacen kasuwanci yana motsawa daga dama zuwa gefen hagu na ginshiƙi zuwa ƙarin haɗin kai da haɗin kai.

Hoto na 11: Yadda ake haɗa ribar gani a cikin photonics na tushen silicon. Yayin da kake matsawa daga hagu zuwa dama, wurin shigar da masana'anta a hankali yana komawa baya cikin tsari.