Sinadarin aiki na silicon photonics

Sinadarin aiki na silicon photonics

Abubuwan da ke aiki na Photonics suna nufin mu'amala mai ƙarfi da aka tsara da gangan tsakanin haske da abu. Wani abu mai aiki na yau da kullun na photonics shine na'urar daidaita haske. Duk abubuwan da ke aiki bisa silicon na yanzumasu daidaita haskesun dogara ne akan tasirin mai ɗaukar jini kyauta. Canza adadin electrons kyauta da ramuka a cikin kayan silicon ta hanyar doping, hanyoyin lantarki ko na gani na iya canza ma'aunin refractive mai rikitarwa, tsari da aka nuna a cikin lissafi (1,2) wanda aka samu ta hanyar haɗa bayanai daga Soref da Bennett a tsawon nanometers 1550. Idan aka kwatanta da electrons, ramuka suna haifar da babban rabo na canje-canje na ainihin da na tunani na refractive index, wato, suna iya samar da babban canji na lokaci don canjin asara da aka bayar, don haka a cikinMasu gyaran Mach-Zehnderda kuma masu daidaita zobe, yawanci ana fifita amfani da ramuka don yinmasu daidaita lokaci.

Daban-dabanmai daidaita silicon (Si)An nuna nau'ikan a Hoto na 10A. A cikin na'urar allurar ɗaukar hoto, haske yana cikin silicon na ciki a cikin babban mahaɗin fil, kuma ana allurar electrons da ramuka. Duk da haka, irin waɗannan na'urorin daidaitawa suna da jinkiri, yawanci tare da bandwidth na 500 MHz, saboda electrons kyauta da ramuka suna ɗaukar lokaci mai tsawo don sake haɗuwa bayan allura. Saboda haka, ana amfani da wannan tsari sau da yawa azaman mai rage haske mai canzawa (VOA) maimakon mai daidaita. A cikin na'urar daidaita haske mai ɗaukar hoto, ɓangaren haske yana cikin kunkuntar mahaɗin pn, kuma faɗin raguwar mahaɗin pn yana canzawa ta hanyar filin lantarki da aka yi amfani da shi. Wannan na'urar daidaitawa na iya aiki a saurin da ya wuce 50Gb/s, amma yana da babban asarar sakawa a bango. Vpil na yau da kullun shine 2 V-cm. Na'urar daidaitawa ta ƙarfe oxide semiconductor (MOS) (a zahiri semiconductor-oxide-semiconductor) tana ɗauke da siririn layin oxide a cikin mahaɗin pn. Yana ba da damar tara wasu masu ɗaukar kaya da kuma rage yawan masu ɗaukar kaya, yana ba da damar ƙaramin VπL na kimanin 0.2 V-cm, amma yana da rashin kyawun asarar gani mai yawa da kuma ƙarfin iko mafi girma a kowane tsawon naúrar. Bugu da ƙari, akwai masu daidaita sha na lantarki na SiGe bisa ga motsi na gefen SiGe (silicon Germanium alloy). Bugu da ƙari, akwai masu daidaita graphene waɗanda ke dogara da graphene don canzawa tsakanin ƙarfe masu sha da masu hana haske. Waɗannan suna nuna bambancin amfani da hanyoyi daban-daban don cimma daidaitaccen siginar gani mai sauri, mai ƙarancin asara.

Hoto na 10: (A) Zane-zanen sassa daban-daban na ƙirar na'urar auna haske ta silicon da kuma (B) zane-zanen sassa daban-daban na ƙirar na'urar gano haske.

An nuna na'urori masu gano haske da yawa da aka yi da silicon a Hoto na 10B. Kayan da ke shanyewa shine germanium (Ge). Ge yana iya shan haske a tsawon tsayin daka har zuwa kimanin microns 1.6. An nuna a gefen hagu shine tsarin fil mafi nasara a kasuwa a yau. Ya ƙunshi silicon mai nau'in P wanda Ge ke tsiro a kai. Ge da Si suna da rashin daidaito na lattice na 4%, kuma don rage rarrabuwar, ana fara girma siririn Layer na SiGe a matsayin Layer mai kariya. Ana yin doping na nau'in N a saman Layer na Ge. An nuna photodiode na ƙarfe-semiconductor-metal (MSM) a tsakiya, da kuma APD (Mai gano ambaliyar ruwa) an nuna shi a hannun dama. Yankin zaftarewar ƙasa a APD yana cikin Si, wanda ke da ƙananan halayen hayaniya idan aka kwatanta da yankin zaftarewar ƙasa a cikin kayan abubuwa na rukuni na III-V.

A halin yanzu, babu mafita da ke da fa'idodi bayyanannu wajen haɗa ribar gani tare da silicon photonics. Hoto na 11 yana nuna zaɓuɓɓuka da yawa da za a iya tsara su ta hanyar haɗa su. A gefen hagu akwai haɗin kai ɗaya wanda ya haɗa da amfani da germanium (Ge) da aka girma a epitaxially a matsayin kayan gain na gani, jagororin gilashin erbium-doped (Er) (kamar Al2O3, wanda ke buƙatar famfo na gani), da kuma digo-digo na gallium arsenide (GaAs) da aka girma a epitaxially. Ginshiƙi na gaba shine haɗuwa da wafer zuwa wafer, wanda ya haɗa da haɗin oxide da organic a cikin yankin gain na rukuni na III-V. Ginshiƙi na gaba shine haɗuwa da chip-to-wafer, wanda ya haɗa da saka guntun rukuni na III-V cikin ramin silicon wafer sannan a sarrafa tsarin jagorar waveguide. Fa'idar wannan hanyar ginshiƙi na farko guda uku ita ce na'urar za a iya gwada ta sosai a cikin wafer kafin a yanke. Ginshiƙi na dama shine haɗuwa da chip-to-chip, gami da haɗa kai tsaye na kwakwalwan silicon zuwa kwakwalwan rukuni na III-V, da kuma haɗawa ta hanyar ruwan tabarau da mahaɗin grating. Yanayin da ake ciki na amfani da aikace-aikacen kasuwanci yana canzawa daga gefen dama zuwa hagu na jadawalin zuwa ga mafi yawan hanyoyin magance matsalolin da aka haɗa da kuma waɗanda aka haɗa.

Hoto na 11: Yadda ake haɗa ribar gani cikin photonics na silicon. Yayin da kake motsawa daga hagu zuwa dama, wurin saka masana'anta a hankali yana komawa baya a cikin aikin.