Tasirin diode silicon carbide mai ƙarfi akan PIN Photodetector

Tasirin diode silicon carbide mai ƙarfi akan PIN Photodetector

Silicon carbide PIN diode mai ƙarfi ya kasance koyaushe yana ɗaya daga cikin wurare masu zafi a fagen binciken na'urar wutar lantarki. PIN diode shine diode crystal diode da aka gina ta hanyar yin sandwiching Layer na semiconductor na ciki (ko semiconductor tare da ƙarancin ƙarancin ƙazanta) tsakanin yankin P+ da yankin n+. I a cikin PIN shine gajartawar turanci don ma'anar "intronsic", saboda ba zai yuwu a samu tsaftataccen semiconductor ba tare da najasa ba, don haka I Layer na PIN diode a cikin aikace-aikacen yana da yawa ko žasa gauraye da ƙaramin adadin P. -nau'i ko najasa irin na N. A halin yanzu, siliki carbide PIN diode galibi yana ɗaukar tsarin Mesa da tsarin jirgin sama.

Lokacin da mitar aiki na PIN diode ya wuce 100MHz, saboda tasirin ajiya na ƴan masu dako da tasirin lokacin wucewa a cikin Layer I, diode ɗin ya rasa tasirin gyarawa kuma ya zama ɓangaren impedance, kuma ƙimar impedance yana canzawa tare da ƙarfin lantarki. A sifili son zuciya ko DC koma baya son zuciya, da impedance a cikin I yankin yana da girma sosai. A cikin son zuciya na gaba na DC, yankin I yana ba da ƙarancin rashin ƙarfi saboda allura mai ɗaukar hoto. Sabili da haka, ana iya amfani da diode na PIN azaman nau'in haɓaka mai canzawa, a fagen microwave da sarrafa RF, sau da yawa ya zama dole a yi amfani da na'urori masu sauyawa don cimma canjin siginar, musamman a wasu manyan cibiyoyin sarrafa sigina, diodes na PIN suna da fifiko. Ikon sarrafa siginar RF, amma kuma ana amfani dashi sosai a cikin canjin lokaci, daidaitawa, iyakancewa da sauran da'irori.

Babban ƙarfin silicon carbide diode ana amfani dashi sosai a filin wutar lantarki saboda mafi girman halayen juriyar ƙarfin sa, galibi ana amfani dashi azaman babban bututu mai gyara wutar lantarki. PIN diode yana da babban juzu'i mai mahimmanci na rushewar wutar lantarki VB, saboda ƙarancin doping i Layer a tsakiyar yana ɗauke da babban juzu'in wutar lantarki. Haɓaka kauri na yanki na I da rage yawan ƙwayar doping na yankin Zan iya inganta ingantaccen ƙarfin juzu'i na PIN diode, amma kasancewar yankin zan inganta haɓakar ƙarfin wutar lantarki na gaba VF na na'urar gaba ɗaya da lokacin sauyawa na na'urar. zuwa wani matsayi, kuma diode da aka yi da kayan siliki na carbide na iya daidaita waɗannan ƙarancin. Silicon carbide sau 10 mai mahimmancin rushewar filin lantarki na silicon, ta yadda za'a iya rage kauri na silicon carbide diode I zone zuwa kashi ɗaya cikin goma na bututun silicon, yayin da yake riƙe babban ƙarfin rushewar wutar lantarki, haɗe tare da ingantaccen yanayin zafi na kayan silicon carbide. , Ba za a sami matsalolin da za a iya kawar da zafi ba a fili, don haka babban ƙarfin silicon carbide diode ya zama na'ura mai mahimmanci mai mahimmanci a fannin wutar lantarki na zamani.

Saboda ƙaramin jujjuyawar juyi na yanzu da babban motsi mai ɗaukar kaya, siliki carbide diodes suna da jan hankali sosai a fagen gano wutar lantarki. Ƙananan ɗigogi na halin yanzu na iya rage duhu na na'urar ganowa kuma rage hayaniya; Babban motsi na jigilar kaya na iya inganta haɓakar hankali na mai gano PIN na siliki carbide (PIN Photodetector). Halayen ƙarfin ƙarfi na siliki carbide diodes suna ba masu gano PIN damar gano tushen haske masu ƙarfi kuma ana amfani da su sosai a cikin sararin samaniya. An mai da hankali sosai ga siliki carbide diode mai ƙarfi saboda kyawawan halayensa, kuma an haɓaka bincikensa sosai.

微信图片_20231013110552

 


Lokacin aikawa: Oktoba-13-2023