Tasirin diode mai ƙarfin silicon carbide mai ƙarfi akan na'urar gano hoto ta PIN

Tasirin diode mai ƙarfi na silicon carbide akanMai gano hoto na PIN

Diode mai ƙarfin silicon carbide mai ƙarfin gaske koyaushe yana ɗaya daga cikin wuraren da ake samun matsala a fannin binciken na'urorin wutar lantarki. Diode mai ƙarfin PIN diode ne mai lu'ulu'u wanda aka gina ta hanyar haɗa wani Layer na semiconductor na ciki (ko semiconductor tare da ƙarancin yawan ƙazanta) tsakanin yankin P+ da yankin n+. I a cikin PIN gajeriyar hanya ce ta Ingilishi don ma'anar "intrinsic", saboda ba zai yiwu a sami semiconductor mai tsabta ba tare da ƙazanta ba, don haka Layer na I na diode mai ƙarfin PIN a cikin aikace-aikacen yana gauraye da ƙaramin adadin ƙazanta na nau'in P ko N. A halin yanzu, diode mai ƙarfin silicon carbide PIN galibi yana ɗaukar tsarin Mesa da tsarin jirgin sama.

Idan mitar aiki ta PIN diode ta wuce 100MHz, saboda tasirin ajiya na wasu masu ɗaukar kaya da kuma tasirin lokacin wucewa a cikin Layer I, diode ɗin ya rasa tasirin gyara kuma ya zama sinadarin impedance, kuma ƙimar impedance ɗinsa ta canza tare da ƙarfin bias. A sifili bias ko DC reverse bias, impedance a yankin I yana da yawa sosai. A cikin DC gaba bias, yankin I yana gabatar da ƙarancin yanayin impedance saboda allurar mai ɗaukar kaya. Saboda haka, ana iya amfani da PIN diode azaman abin hana canji, a fagen microwave da sarrafa RF, sau da yawa yana da mahimmanci a yi amfani da na'urorin canzawa don cimma canjin sigina, musamman a wasu cibiyoyin sarrafa sigina masu yawan mita, PIN diode suna da ƙwarewar sarrafa siginar RF mafi kyau, amma kuma ana amfani da su sosai a cikin canjin lokaci, daidaitawa, iyakancewa da sauran da'irori.

Ana amfani da diode mai ƙarfin silicon carbide mai ƙarfi sosai a fannin wutar lantarki saboda kyawun halayensa na juriya ga ƙarfin lantarki, galibi ana amfani da shi azaman bututun gyara mai ƙarfi.Na'urar PIN diodeyana da babban ƙarfin lantarki mai ƙarfi na juyawa mai mahimmanci VB, saboda ƙarancin layin doping i a tsakiya yana ɗauke da raguwar babban ƙarfin lantarki. Ƙara kauri na yankin I da rage yawan doping na yankin Ina iya inganta ƙarfin lantarki na juyawa na diode na PIN yadda ya kamata, amma kasancewar yankin I zai inganta raguwar ƙarfin lantarki na gaba VF na dukkan na'urar da lokacin sauyawa na na'urar zuwa wani mataki, kuma diode da aka yi da kayan silicon carbide na iya rama waɗannan ƙarancin. Silicon carbide sau 10 yana da mummunan filin lantarki na silicon, don haka kauri na silicon carbide diode I na yankin za a iya rage shi zuwa kashi ɗaya bisa goma na bututun silicon, yayin da yake riƙe da babban ƙarfin lantarki mai ƙarfi, tare da kyakkyawan yanayin zafi na kayan silicon carbide, ba za a sami wata matsala ta watsa zafi a bayyane ba, don haka diode mai ƙarfi na silicon carbide ya zama na'urar gyarawa mai mahimmanci a fagen kayan lantarki na zamani.

Saboda ƙarancin kwararar ruwan baya da kuma yawan motsi mai ɗaukar kaya, diodes ɗin silicon carbide suna da babban jan hankali a fannin gano hasken lantarki. Ƙaramin kwararar ruwan na iya rage kwararar ruwan duhu na na'urar ganowa da rage hayaniya; Babban motsi mai ɗaukar kaya na iya inganta yadda ake ji game da silicon carbide yadda ya kamata.Mai gano PIN(PIN Photodetector). Halayen silicon carbide diodes masu ƙarfi suna ba wa na'urorin gano PIN damar gano tushen haske masu ƙarfi kuma ana amfani da su sosai a fagen sararin samaniya. An kula da na'urorin gano silicon carbide masu ƙarfi saboda kyawawan halayensa, kuma bincikensa ya ci gaba sosai.