Tasirin babban ƙarfin silicon carbide diode akanPIN Photodetector
Silicon carbide PIN diode mai ƙarfi ya kasance koyaushe yana ɗaya daga cikin wurare masu zafi a fagen binciken na'urar wutar lantarki. PIN diode shine diode crystal diode da aka gina ta hanyar yin sandwiching Layer na semiconductor na ciki (ko semiconductor tare da ƙarancin ƙarancin ƙazanta) tsakanin yankin P+ da yankin n+. I a cikin PIN shine gajartawar turanci don ma'anar "intronsic", saboda ba zai yuwu a samu tsaftataccen semiconductor ba tare da najasa ba, don haka I Layer na PIN diode a cikin aikace-aikacen yana da yawa ko žasa gauraye da ƙaramin nau'in P-type ko N-type. A halin yanzu, siliki carbide PIN diode galibi yana ɗaukar tsarin Mesa da tsarin jirgin sama.
Lokacin da mitar aiki na PIN diode ya wuce 100MHz, saboda tasirin ajiya na ƴan masu dako da tasirin lokacin wucewa a cikin Layer I, diode ɗin ya rasa tasirin gyarawa kuma ya zama ɓangaren impedance, kuma ƙimar impedance yana canzawa tare da ƙarfin lantarki. A sifili son zuciya ko DC koma baya son zuciya, da impedance a cikin I yankin yana da girma sosai. A cikin son zuciya na gaba na DC, yankin I yana ba da ƙarancin rashin ƙarfi saboda allura mai ɗaukar hoto. Sabili da haka, ana iya amfani da diode na PIN azaman nau'in haɓaka mai canzawa, a fagen microwave da sarrafa RF, sau da yawa ya zama dole a yi amfani da na'urori masu sauyawa don cimma canjin siginar, musamman a wasu manyan cibiyoyin sarrafa siginar, PIN diodes suna da mafi girman ikon sarrafa siginar RF, amma kuma ana amfani da su sosai a cikin canjin lokaci, daidaitawa, iyakancewa da sauran da'irori.
Babban ƙarfin silicon carbide diode ana amfani dashi sosai a filin wutar lantarki saboda mafi girman halayen juriyar ƙarfin sa, galibi ana amfani dashi azaman babban bututu mai gyara wutar lantarki. ThePIN diodeyana da babban juzu'i mai mahimmanci na rushewar wutar lantarki VB, saboda ƙarancin doping i Layer a tsakiyar ɗaukar babban faɗuwar wutar lantarki. Ƙara kauri na yanki na I da rage ƙwayar doping na yankin Zan iya inganta ingantaccen ƙarfin wutar lantarki na PIN diode, amma kasancewar yankin zan inganta haɓakar ƙarfin ƙarfin VF na gaba ɗaya na na'urar da lokacin sauya na'urar zuwa wani ɗan lokaci, kuma diode ɗin da aka yi da kayan silicon carbide na iya daidaita waɗannan ƙarancin. Silicon carbide sau 10 da m rushewar wutar lantarki filin silicon, don haka da silicon carbide diode I zone kauri za a iya rage zuwa kashi daya bisa goma na silicon tube, yayin da rike wani high rushewar ƙarfin lantarki, tare da mai kyau thermal conductivity na silicon carbide kayan, ba za a sami wani bayyananne matsalolin zafi watsawa, don haka high-ikon silicon carbide diode ya zama mai matukar muhimmanci filin lantarki na'urar gyara lantarki na'urar.
Saboda ƙaramin jujjuyawar juyi na yanzu da babban motsi mai ɗaukar kaya, siliki carbide diodes suna da jan hankali sosai a fagen gano wutar lantarki. Ƙananan ɗigogi na halin yanzu na iya rage duhu na na'urar ganowa kuma rage hayaniya; Babban motsi na jigilar kaya na iya inganta haɓakar hankali na silicon carbide yadda ya kamataMai gano PIN(PIN Photodetector). Halayen ƙarfin ƙarfi na siliki carbide diodes suna ba masu gano PIN damar gano tushen haske masu ƙarfi kuma ana amfani da su sosai a cikin sararin samaniya. An mai da hankali sosai ga siliki carbide diode mai ƙarfi saboda kyawawan halayensa, kuma an haɓaka bincikensa sosai.
Lokacin aikawa: Oktoba-13-2023