Ci gaban kwanan nan ahigh sensitivity avalanche photodetectors
Babban zafin jiki na ɗaki 1550 nmAvalanche photodiode detector
A cikin rukunin infrared na kusa (SWIR), ana amfani da diodes mai saurin kaifin hankali a cikin sadarwar optoelectronic da aikace-aikacen liDAR. Duk da haka, na yanzu kusa-infrared avalanche photodiode (APD) mamaye Indium gallium arsenic avalanche breakdown diode (InGaAs APD) an ko da yaushe an iyakance ta bazuwar karo ionization amo na gargajiya multiplier yankin kayan, indium phosphide (InP) da indium aluminum arsenic (A AlAs) da gagarumin raguwa a cikin na'urar. A cikin shekaru da yawa, masu bincike da yawa suna neman sabbin kayan aikin semiconductor waɗanda suka dace da InGaAs da InP optoelectronic tsarin dandamali kuma suna da ƙarancin tasirin ionization amo mai kama da babban kayan silicon.
Sabuwar 1550nm avalanche photodiode detector yana taimakawa haɓaka tsarin LiDAR
Tawagar masu bincike a Burtaniya da Amurka a karon farko sun yi nasarar ƙera wani sabon mai ɗaukar hoto na 1550 nm APD (ultra high sensitivity).dusar ƙanƙara mai daukar hoto), wani ci gaba wanda yayi alkawarin inganta aikin tsarin LiDAR da sauran aikace-aikacen optoelectronic.
Sabbin kayan suna ba da fa'idodi masu mahimmanci
Babban abin da ke cikin wannan binciken shine amfani da sabbin abubuwa. Masu binciken sun zaɓi GaAsSb a matsayin Layer na sha da AlGaAsSb a matsayin Layer mai ninka. Wannan ƙirar ta bambanta da InGaAs/InP na gargajiya kuma yana kawo fa'idodi masu mahimmanci:
1.GaAsSb shayarwa Layer: GaAsSb yana da nau'i mai kama da nau'in shayarwa zuwa InGaAs, kuma sauyawa daga GaAsSb shayarwa Layer zuwa AlGaAsSb (multiplier Layer) ya fi sauƙi, rage tasirin tarko da inganta saurin sauri da haɓakar na'urar.
2.AlGaAsSb multiplier Layer: AlGaAsSb multiplier Layer ya fi na gargajiya InP da InAlAs multiplier Layer a cikin aiki. An fi nuna shi a babban riba a cikin zafin jiki, babban bandwidth da ƙaramar ƙaranci mai ƙaranci.
Tare da kyawawan alamun aiki
SabuwaAPD photodetector(Avalanche photodiode detector) kuma yana ba da ingantaccen haɓakawa a cikin ma'aunin aiki:
1. Ultra-high riba: An samu babban riba na 278 a cikin dakin da zafin jiki, kuma kwanan nan Dr. Jin Xiao ya inganta tsarin ingantawa da tsari, kuma an ƙara yawan riba zuwa M=1212.
2. Ƙarƙashin ƙarar amo: yana nuna ƙaramar ƙarar ƙarar ƙara (F <3, riba M = 70; F<4, riba M=100).
3. Babban ƙarfin ƙididdigewa: a ƙarƙashin matsakaicin riba, ƙimar ƙima yana da girma kamar 5935.3%. Ƙarfin zafin jiki mai ƙarfi: raunin hankali a ƙananan zafin jiki shine kusan 11.83 mV/K.
Hoto na 1 Yawan hayaniyar APDna'urorin daukar hotoidan aka kwatanta da sauran APD photodetector
Faɗin aikace-aikacen bege
Wannan sabon APD yana da muhimmiyar tasiri ga tsarin liDAR da aikace-aikacen photon:
1. Ingantacciyar siginar sigina zuwa amo: Babban riba da ƙananan halayen amo suna haɓaka ƙimar sigina zuwa amo, wanda ke da mahimmanci ga aikace-aikace a cikin mahalli mara kyau na photon, irin su kula da iskar gas.
2. Ƙarfafawa mai ƙarfi: Sabuwar APD photodetector (avalanche photodetector) an tsara shi don dacewa da indium phosphide (InP) dandamali na optoelectronics na yanzu, yana tabbatar da haɗin kai tare da tsarin sadarwar kasuwanci na yanzu.
3. Babban aiki mai dacewa: Yana iya aiki da kyau a dakin da zafin jiki ba tare da hadaddun hanyoyin kwantar da hankali ba, sauƙaƙe ƙaddamarwa a cikin aikace-aikace daban-daban.
Ci gaban wannan sabon 1550 nm SACM APD photodetector (avalanche photodetector) yana wakiltar babban ci gaba a cikin filin, Yana magance ƙayyadaddun ƙayyadaddun ƙayyadaddun ƙararrawa da kuma samun samfurori na bandwidth a cikin kayan gargajiya na APD photodetector (avalanche photodetector). Ana sa ran wannan ƙirƙira za ta haɓaka ƙarfin tsarin liDAR, musamman a cikin tsarin liDAR marasa matuƙa, da kuma sadarwar sararin samaniya.
Lokacin aikawa: Janairu-13-2025