Ka'ida da halin yanzu nadusar ƙanƙara mai daukar hoto (APD photodetector) Kashi Na Biyu
2.2 Tsarin guntu APD
Tsarin guntu mai ma'ana shine ainihin garantin na'urori masu girma. Tsarin tsari na APD ya fi la'akari da lokacin RC akai-akai, kama rami a heterojunction, lokacin jigilar jigilar kaya ta yankin raguwa da sauransu. An taƙaita ci gaban tsarin sa a ƙasa:
(1) Tsarin asali
Tsarin APD mafi sauƙi yana dogara ne akan photodiode na PIN, yankin P da yankin N suna da ƙarfi sosai, kuma an gabatar da nau'in N-type ko P-type sau biyu-mai hanawa a yankin P na kusa ko yankin N don samar da electrons na biyu da rami. nau'i-nau'i, don gane haɓakawa na farko na photocurrent. Don jerin kayan aikin InP, saboda ramin tasirin ionization coefficient ya fi ƙarfin tasirin tasirin wutar lantarki, yankin riba na nau'in doping na N- yawanci ana sanya shi a cikin yankin P. A cikin yanayin da ya dace, kawai ramuka ana allura a cikin yankin riba, don haka ana kiran wannan tsarin tsarin allurar rami.
(2) An bambanta sha da riba
Saboda faffadan tazara na bandeji na InP (InP shine 1.35eV kuma InGaAs shine 0.75eV), InP galibi ana amfani dashi azaman yanki mai riba da InGaAs azaman yanki mai ɗaukar hoto.
(3) Ana gabatar da tsarin sha, gradient da riba (SAGM) bi da bi
A halin yanzu, yawancin na'urorin APD na kasuwanci suna amfani da kayan InP / InGaAs, InGaAs a matsayin Layer na sha, InP a ƙarƙashin babban filin lantarki (> 5x105V / cm) ba tare da rushewa ba, ana iya amfani dashi azaman yanki mai riba. Don wannan abu, ƙirar wannan APD shine cewa an kafa tsarin ƙazamar ruwa a cikin nau'in N-type InP ta hanyar karo na ramuka. Yin la'akari da babban bambanci a cikin ratar band tsakanin InP da InGaAs, bambancin matakin makamashi na kusan 0.4eV a cikin valence band ya sa ramukan da aka samar a cikin InGaAs mai shayarwa ya toshe a gefen heterojunction kafin isa ga InP multiplier Layer kuma gudun yana da yawa sosai. rage, haifar da dogon amsa lokaci da kunkuntar bandwidth na wannan APD. Ana iya magance wannan matsalar ta ƙara inGaAsP matsakaici Layer tsakanin kayan biyu.
(4) Ana gabatar da tsarin sha, gradient, caji da riba (SAGCM) bi da bi.
Don ƙara daidaita rarraba filin lantarki na Layer na sha da kuma samun riba, ana shigar da cajin cajin a cikin ƙirar na'urar, wanda ke inganta saurin na'urar da kuma amsawa sosai.
(5) Ingantaccen Resonator (RCE) Tsarin SAGCM
A cikin mafi kyawun ƙirar da ke sama na masu gano na al'ada, dole ne mu fuskanci gaskiyar cewa kaurin Layer na sha yana da sabani ga saurin na'urar da ƙimar ƙima. Ƙaƙƙarfan kauri na Layer mai ɗaukar hoto na iya rage lokacin jigilar jigilar kaya, don haka ana iya samun babban bandwidth. Koyaya, a lokaci guda, don samun ƙimar ƙima mafi girma, Layer ɗin sha yana buƙatar samun isasshen kauri. Maganin wannan matsala na iya zama tsarin resonant cavity (RCE), wato Bragg Reflector (DBR) da aka rarraba a kasa da saman na'urar. Madubin DBR ya ƙunshi nau'ikan kayan abu biyu tare da ƙananan ƙididdiga mai ƙididdigewa da babban ƙididdiga mai ƙarfi a cikin tsari, kuma su biyun suna girma dabam, kuma kauri na kowane Layer ya gamu da abin da ya faru na tsawon haske 1/4 a cikin semiconductor. Tsarin resonator na na'urar ganowa na iya saduwa da buƙatun saurin, kauri daga cikin Layer na iya zama bakin ciki sosai, kuma ƙimar adadin wutar lantarki yana ƙaruwa bayan tunani da yawa.
(6) Tsarin jagorar waveguide (WG-APD)
Wani bayani don warware sabani na tasirin daban-daban na kauri na kauri akan saurin na'urar da ingancin adadi shine gabatar da tsarin jagorar igiyar ruwa mai hade-haɗe. Wannan tsarin yana shiga haske daga gefe, saboda abin sha yana da tsayi sosai, yana da sauƙi don samun ƙarfin ƙima mai yawa, kuma a lokaci guda, za a iya sanya Layer na sha na bakin ciki sosai, yana rage lokacin jigilar jigilar kaya. Sabili da haka, wannan tsarin yana warware dogaro daban-daban na bandwidth da inganci akan kauri na Layer na sha, kuma ana tsammanin cimma babban ƙimar da ƙimar ƙimar ƙimar APD. Tsarin WG-APD ya fi na RCE APD sauƙi, wanda ke kawar da tsarin shiri mai rikitarwa na madubi DBR. Sabili da haka, ya fi dacewa a fagen aiki kuma ya dace da haɗin haɗin jirgin sama na gama gari.
3. Kammalawa
Ci gaban kankaramai daukar hotoAna duba kayan aiki da na'urori. Adadin ionization na lantarki da ramuka na kayan InP suna kusa da na InAlAs, wanda ke haifar da tsari sau biyu na alamar jigilar jigilar kaya guda biyu, wanda ke sanya lokacin ginin dusar ƙanƙara ya daɗe kuma ƙara ƙara. Idan aka kwatanta da tsarkakakken kayan InAlAs, InGaAs (P) / InAlAs da In (Al) GaAs/InAlAs ƙayyadaddun tsarin rijiyoyin ƙididdiga suna da ƙaƙƙarfan rabo na ƙididdigar ionization na karo, don haka ana iya canza aikin amo sosai. Dangane da tsari, resonator ingantattun (RCE) SAGCM tsarin da gefen-haɗe-haɗe waveguide tsarin (WG-APD) an ɓullo da domin warware sabani na daban-daban effects na sha Layer kauri a kan gudun na'urar da adadi yadda ya dace. Saboda sarkar tsarin, cikakken aikace-aikacen waɗannan sifofi guda biyu yana buƙatar ƙarin bincike.
Lokacin aikawa: Nuwamba-14-2023