Ka'idar da halin yanzu naAvalanche Photonetecor (Safiyo) Sashe biyu
2.2 APD Chip Tsarin
Tsarin Chipirƙiri Tsarin tsari shine ainihin mahimmancin na'urorin ci gaba. Tsarin tsari na APD ya yi la'akari da kullun RC, wanda aka kama a cikin heterojunction, lokacin jigilar kaya ta hanyar da ke gudana a yankin da sauransu. An taƙaita ci gaban tsarinsa a ƙasa:
(1) tsarin asali
Tsarin APD mafi sauƙi ya dogara da Photodoode, an gabatar da PIRA-elant na 'yan ido a kusa da na farko. Don kayan aikin int, saboda ramin ramin ioni ya fi yawan tasirin onization, yawanci yanki na n-nau'in doping doping ana sanya shi a cikin P yankin. A cikin yanayin da ya dace, ana yin ramuka kawai a cikin yankin da ake samu, don haka ana kiran wannan tsarin ne rami mai ɗaukar hoto.
(2) sha da abubuwan da aka bambanta
Saboda halayen banbancin fahada na Inp (Inp shine 1.35ev da Ingeraas shine 0.75EV), a yawanci ana amfani da shi azaman kayan yaduwa da Ingdaas azaman kayan aikin.
(3) Ife, mafi kyawu da samun kuɗi (sagm) an gabatar da bi da bi
A halin yanzu, mafi yawan na'urorin kasuwanci apd suna amfani da kayan ANP / Ingdaas a matsayin babban filin lantarki (> 5x105v / cm 550v / cm) ba tare da fashewa ba, ana iya amfani dashi azaman kayan aikin kayan aiki. Don wannan abu, ƙirar wannan apd ita ce cewa an kafa tsarin zirga-zirgar a cikin n-nau'in in inp ta hanyar hadurran ramuka. La'akari da babban bambanci a cikin Band Band tsakanin INP da Ingeraas, matakin matakin da ke haifar da lokacin mayar da hankali da kunkuntar bandwidth na wannan apd. Za'a iya magance wannan matsalar ta hanyar ƙara lambar wucewa ta Ingsas tsakanin kayan biyu.
(4) The sha, gradient, cadient, caji da riba (sagcm) an gabatar da bi da bi
Don kara gyara rarraba filin lantarki na kiyaye Layer da riba Layer, an gabatar da Layerar caji a cikin ƙirar na'urar, wanda ke inganta saurin na'urar da martani.
(5) Maimaita Ingantaccen Tsarin Sagcm
A cikin na da ingantaccen tsari na masu binciken gargajiya, dole ne mu fuskanci gaskiyar cewa kauri daga cikin sha na saurin naúrar da kuma ingancin ingancin Quantum. Kauri na bakin ciki na ɗaukar nauyi na sha zai iya rage lokacin jigilar kaya, sai a iya samun babban bandwidth. Koyaya, a lokaci guda, domin samun mafi girman tasirin quantum, Layafin sha yana buƙatar samun wadataccen kauri. Mafita ga wannan matsalar na iya zama rami mai tsallaka (Rce), wato, an tsara shi a kasan da saman na'urar. DBB Mirror ya ƙunshi nau'ikan kayan da ke da ƙarancin kayan maye da kuma alamar rashin ƙarfi a cikin tsari 1/4 a cikin semicononductor. Tsarin mai ganowa na iya biyan bukatun Saurin, kauri daga cikin Layer Layer, da kuma ingancin Quantum na lantarki ya karu bayan da yawa tunani.
(6) Odge-Couped Comped Couple (WG-Apd)
Wata mafita don warware rikicin na tasirin tasirin sha na kauri da Quantatum shine gabatar da tsarin cover-couple. Wannan tsarin yana shiga haske daga gefe, saboda Layer Layer yana da tsayi sosai, yana da sauƙi don samun babban ingancin quantum, kuma a lokaci guda, ana iya yin amfani da shi sosai, yana rage lokacin jigilar kaya. Saboda haka, wannan tsarin yana warware dogaro da banbancin bandwidth da inganci akan kauri daga Layer Layer, kuma ana tsammanin zai cimma babban kudi da kuma babban tasirin quantum apd. Tsarin WG-Apd yana da sauki fiye da na RCE APD, wanda ke kawar da tsarin rikitarwa na DBB Mirror. Sabili da haka, ya fi yiwuwa a cikin m filin kuma ya dace da haɗin saman jirgin sama na yau da kullun.
3. Kammalawa
Ci gaban Warlanchesafiyokayan da na'urori ana yin nazari. Wutar lantarki da ramin ramin ionization na kayan inp na kusa da waɗanda na Innalas, wanda ke haifar da lokaci sau biyu da amo ya ƙaru. Idan aka kwatanta da tsarkakakken kayan abinci na Inalas, Ingaas (PD) / Inalas da Gaas / Inlalas Quantum da kyau na hade, don haka ana iya sauya aikin mai yawa. Dangane da tsari, mai yiwuwa inganta (RCE) tsarin Sagcm da kuma gefen cunkoso na tsinkaye na share kauri da quantatum. Saboda hadaddun tsarin, cikakken aikace-aikacen amfani na waɗannan hanyoyin guda biyu suna buƙatar cigaba da bincika.
Lokacin Post: Nuwamba-14-2023