Gabatarwa ga Laser Mai Fitar da Edge (EEL)

Gabatarwa ga Laser Mai Fitar da Edge (EEL)
Domin samun fitowar laser mai ƙarfin gaske na semiconductor, fasahar da ake amfani da ita a yanzu ita ce amfani da tsarin fitar da iskar gas. Resonator na laser semiconductor mai fitar da iskar gas ya ƙunshi saman rabuwar yanayi na lu'ulu'u na semiconductor, kuma hasken fitarwa yana fitowa daga ƙarshen gaba na laser. Laser semiconductor na nau'in fitar da iskar gas na iya samun babban ƙarfin fitarwa, amma wurin fitarwarsa yana da elliptical, ingancin hasken ba shi da kyau, kuma ana buƙatar gyara siffar hasken tare da tsarin siffanta haske.
Zane mai zuwa yana nuna tsarin laser semiconductor mai fitar da gefen. Ramin gani na EEL yana daidai da saman guntu na semiconductor kuma yana fitar da laser a gefen guntu na semiconductor, wanda zai iya samar da fitowar laser tare da babban iko, babban gudu da ƙarancin amo. Duk da haka, fitowar hasken laser ta EEL gabaɗaya yana da sashin giciye na katako mara daidaituwa da babban bambancin kusurwa, kuma ingancin haɗin kai tare da zare ko wasu abubuwan gani yana da ƙasa.

Ƙaruwar ƙarfin fitarwa na EEL yana iyakance ne ta hanyar tarin zafi a yankin aiki da lalacewar gani a saman semiconductor. Ta hanyar ƙara yankin jagorar raƙuman ruwa don rage tarin zafi a yankin aiki don inganta watsawar zafi, ƙara yankin fitarwa na haske don rage yawan ƙarfin gani na hasken don guje wa lalacewar gani, ana iya samun ƙarfin fitarwa har zuwa ɗaruruwan milliwatts a cikin tsarin jagorar raƙuman ruwa guda ɗaya.
Ga jagorar raƙuman ruwa mai girman milimita 100, laser mai fitar da gefen guda ɗaya zai iya samun watts goma na ƙarfin fitarwa, amma a wannan lokacin jagorar raƙuman ruwa tana da yanayi da yawa a saman guntu, kuma rabon hasken fitowar kuma ya kai 100:1, yana buƙatar tsarin siffanta hasken rana mai rikitarwa.
Dangane da cewa babu wani sabon ci gaba a fasahar kayan aiki da fasahar ci gaban epitaxial, babbar hanyar inganta ƙarfin fitarwa na guntuwar laser na semiconductor guda ɗaya ita ce ƙara faɗin tsiri na yankin haske na guntu. Duk da haka, ƙara faɗin tsiri da yawa yana da sauƙi don samar da yanayin juyawa mai girma da juyawa mai kama da filament, wanda zai rage daidaiton fitowar haske sosai, kuma ƙarfin fitarwa baya ƙaruwa daidai gwargwado tare da faɗin tsiri, don haka ƙarfin fitarwa na guntu ɗaya yana da iyaka sosai. Domin inganta ƙarfin fitarwa sosai, fasahar tsararraki ta zo. Fasahar ta haɗa na'urorin laser da yawa akan substrate iri ɗaya, don haka kowace na'urar fitar da haske an jera ta a matsayin jeri mai girma ɗaya a cikin jagorancin axis mai jinkirin, matuƙar ana amfani da fasahar warewar gani don raba kowace na'urar fitar da haske a cikin jeri, don kada su tsoma baki da juna, suna samar da lasing mai buɗewa da yawa, za ku iya ƙara ƙarfin fitarwa na guntu gaba ɗaya ta hanyar ƙara adadin na'urorin fitar da haske da aka haɗa. Wannan guntuwar laser ta semiconductor guntu ce ta laser array (LDA), wacce aka fi sani da sandar laser ta semiconductor.