Ana gabatar da masu gano hotuna masu saurin gudu ta hanyarInGaAs masu gano hoto
Masu saurin daukar hotoa fagen sadarwa na gani sun hada da III-V InGaAs masu binciken hoto da IV cikakken Si da Ge/Da photodetectors. Na farko dai wani na'ura ne na gargajiya kusa da injin gano infrared, wanda ya dade da yawa, yayin da na karshen ya dogara da fasahar gani na silicon don zama tauraro mai tasowa, kuma wuri ne mai zafi a fagen bincike na optoelectronics na kasa da kasa a cikin 'yan shekarun nan. Bugu da ƙari, sababbin masu ganowa bisa ga perovskite, kwayoyin halitta da kayan aiki masu girma biyu suna tasowa da sauri saboda fa'idodin aiki mai sauƙi, sassauci mai kyau da kaddarorin daidaitawa. Akwai bambance-bambance masu mahimmanci tsakanin waɗannan sababbin masu ganowa da na gargajiya na inorganic photodetectors a cikin kayan kayan aiki da tsarin masana'antu. Masu binciken Perovskite suna da kyawawan halaye na ɗaukar haske da ingantaccen ƙarfin jigilar kaya, ana amfani da na'urori masu gano kayan halitta don ƙarancin tsadarsu da na'urorin lantarki masu sassauƙa, kuma masu gano abubuwa masu girma biyu sun ja hankalinsu sosai saboda ƙayyadaddun kayansu na zahiri da babban motsi mai ɗaukar hoto. Duk da haka, idan aka kwatanta da InGaAs da Si / Ge masu ganowa, sababbin masu binciken har yanzu suna buƙatar inganta su dangane da kwanciyar hankali na dogon lokaci, balaga da masana'antu da haɗin kai.
InGaAs yana ɗaya daga cikin ingantattun kayan don gano babban saurin gudu da manyan masu binciken hoto. Da farko dai, InGaAs wani abu ne mai ɗaukar nauyin bandgap kai tsaye, kuma faɗinsa na bandgap za a iya daidaita shi ta hanyar rabo tsakanin In da Ga don cimma gano siginar gani na tsawon zango daban-daban. Daga cikin su, In0.53Ga0.47As ne daidai matching tare da substrate lattice na InP, kuma yana da babban haske sha coefficient a cikin Tantancewar sadarwa band, wanda shi ne mafi yadu amfani a cikin shirye-shiryen.masu daukar hoto, kuma duhun halin yanzu da aikin amsawa suma sune mafi kyau. Abu na biyu, InGaAs da kayan InP duka suna da babban saurin ɗigon lantarki, kuma cikakken saurin tafiyarsu na lantarki yana kusan 1 × 107 cm/s. A lokaci guda, InGaAs da kayan InP suna da tasirin wuce gona da iri a ƙarƙashin takamaiman filin lantarki. Za'a iya raba saurin wuce gona da iri zuwa 4 × 107cm / s da 6 × 107cm / s, wanda ke da fa'ida don fahimtar babban adadin bandwidth mai iyakacin lokaci. A halin yanzu, InGaAs photodetector shi ne mafi al'ada photodetector ga Tantancewar sadarwa, da kuma surface abin da ya faru hada guda biyu hanya mafi yawa ana amfani da a kasuwa, da kuma 25 Gbaud / s da 56 Gbaud / s surface gano abin da ya faru da kayayyakin an gane. Ƙananan girman, abin da ya faru na baya da kuma manyan na'urori masu gano abin da ya faru na bandwidth suma an ɓullo da su, waɗanda suka fi dacewa da babban gudu da aikace-aikacen jikewa. Koyaya, binciken abin da ya faru na saman yana iyakance ta yanayin haɗin gwiwa kuma yana da wahalar haɗawa da sauran na'urorin optoelectronic. Sabili da haka, tare da haɓaka buƙatun haɗin kai na optoelectronic, waveguide tare da InGaAs masu daukar hoto tare da kyakkyawan aiki da dacewa da haɗin kai sun zama abin da aka fi mayar da hankali kan bincike a hankali, daga cikinsu kasuwancin 70 GHz da 110 GHz InGaAs photoprobe kayayyaki kusan duk suna amfani da tsarin haɗin gwiwar waveguide. Dangane da nau'ikan kayan maɓalli daban-daban, haɗin gwiwar InGaAs photoelectric bincike za a iya raba shi zuwa rukuni biyu: InP da Si. Kayan epitaxial akan InP substrate yana da inganci mai kyau kuma ya fi dacewa da shirye-shiryen na'urori masu mahimmanci. Koyaya, rashin daidaituwa daban-daban tsakanin kayan III-V, kayan InGaAs da sifofin Si waɗanda aka girma ko haɗin gwiwa akan sifofin Si suna haifar da ƙarancin ƙarancin abu ko ingancin mu'amala, kuma aikin na'urar har yanzu yana da babban ɗaki don haɓakawa.
Lokacin aikawa: Dec-31-2024