High yi ultrafast wafer Laser fasahar

Babban aikin ultrafast waferfasahar laser
Babban ikoultrafast lasersana amfani da su sosai a masana'antu na ci gaba, bayanai, microelectronics, bioomedicine, tsaron ƙasa da filayen soja, kuma binciken kimiyya da ya dace yana da mahimmanci don haɓaka haɓakar kimiyya da fasaha na ƙasa da haɓaka mai inganci. Yanke bakin cikitsarin lasertare da fa'idodinsa na matsakaicin matsakaicin ƙarfi, babban ƙarfin bugun jini da ingantaccen ingancin katako yana da babban buƙatu a cikin ilimin kimiyyar lissafi na biyu, sarrafa kayan aiki da sauran fannonin kimiyya da masana'antu, kuma ƙasashe sun damu sosai a duk faɗin duniya.
Kwanan nan, ƙungiyar bincike a kasar Sin ta yi amfani da ƙirar wafer da aka haɓaka da kanta da fasahar haɓaka haɓakawa don cimma babban aiki (babban kwanciyar hankali, babban ƙarfi, ingancin katako mai ƙarfi, ingantaccen inganci) wafer mai saurin gaske.Laserfitarwa. Ta hanyar zane na regeneration amplifier rami da kuma kula da surface zafin jiki da kuma inji kwanciyar hankali na diski crystal a cikin rami, da Laser fitarwa na guda bugun jini makamashi> 300 μJ, bugun jini nisa <7 ps, matsakaicin iko> 150 W aka samu. , kuma mafi girman ƙarfin jujjuyawar haske-zuwa-haske zai iya kaiwa 61%, wanda kuma shine mafi girman ingancin juyawar gani da aka ruwaito ya zuwa yanzu. Matsakaicin ingancin katako M2 <1.06@150W, 8h kwanciyar hankali RMS<0.33%, wannan nasarar tana nuna muhimmiyar ci gaba a cikin babban aikin ultrafast wafer Laser, wanda zai samar da ƙarin dama ga aikace-aikacen Laser mai ƙarfi mai ƙarfi.

Babban mitar maimaitawa, tsarin haɓaka haɓakawar wafer mai ƙarfi
An nuna tsarin firikwensin Laser na wafer a cikin Hoto 1. Ya haɗa da tushen iri na fiber, shugaban Laser yanki na bakin ciki da rami mai haɓakawa. An yi amfani da ytterbium-doped fiber oscillator tare da matsakaicin ƙarfi na 15mW, matsakaicin tsayi na 1030 nm, faɗin bugun jini na 7.1 ps da maimaita adadin 30 MHz azaman tushen iri. Shugaban Laser na wafer yana amfani da Yb na gida: YAG crystal mai diamita na 8.8 mm da kauri na 150 µm da tsarin famfo mai bugun jini 48. Tushen famfo yana amfani da layin sifili-phonon LD tare da tsayin makulli na nm 969, wanda ke rage lahanin ƙididdigewa zuwa 5.8%. Tsarin sanyaya na musamman zai iya kwantar da kristal wafer yadda ya kamata kuma ya tabbatar da kwanciyar hankali na sake farfadowa. Ƙaƙwalwar haɓakawar haɓakawa ta ƙunshi ƙwayoyin Pockels (PC), Thin Film Polarizers (TFP), Plates Quarter-Wave Plates (QWP) da kuma babban ƙarfin resonator. Ana amfani da masu keɓancewa don hana haɓakar haske daga baya-bayan illa ga tushen iri. Ana amfani da tsarin keɓancewa wanda ya ƙunshi TFP1, Rotator da Plates Half-Wave (HWP) don keɓance tsaba na shigarwa da haɓakar bugun jini. Zurfin iri yana shiga ɗakin haɓaka haɓakawa ta hanyar TFP2. Barium metaborate (BBO) lu'ulu'u, PC, da QWP suna haɗuwa don samar da na'urar canzawa ta gani wanda ke amfani da babban ƙarfin lantarki lokaci-lokaci zuwa PC don zaɓin ɗaukar bugun zuriyar da yaɗa shi baya da gaba a cikin rami. Buga bugun da ake so yana oscillates a cikin rami kuma yana haɓaka yadda ya kamata yayin yaduwar balaguron tafiya ta hanyar daidaita lokacin matsawar akwatin.
Amplifier na farfadowa na wafer yana nuna kyakkyawan aikin fitarwa kuma zai taka muhimmiyar rawa a cikin manyan masana'antun masana'antu kamar matsananciyar ultraviolet lithography, tushen famfo attosecond, 3C lantarki, da sabbin motocin makamashi. A lokaci guda, ana sa ran za a yi amfani da fasahar Laser na wafer zuwa babban mai ƙarfiLaser na'urorin, samar da sabon hanyoyin gwaji don samuwa da kuma ganowa mai kyau na kwayoyin halitta akan ma'aunin sararin samaniya na nanoscale da sikelin lokaci na femtosecond. Tare da manufar bauta wa manyan bukatun kasar, aikin tawagar za su ci gaba da mayar da hankali a kan Laser fasaha bidi'a, kara karya ta hanyar shirye-shiryen da dabarun high-ikon Laser lu'ulu'u, da kuma yadda ya kamata inganta m bincike da kuma ci gaban iyawa na Laser na'urorin a cikin. fannonin bayanai, makamashi, manyan kayan aiki da dai sauransu.