Bipolar mai girma biyudusar ƙanƙara mai daukar hoto
Mai binciken hoto mai girma biyu mai girma (bipolar)APD photodetector) ya cimma matsananci-ƙananan amo da babban ganewar hankali
Gano babban hazaka na ƴan photons ko ma na photon guda ɗaya yana da mahimman buƙatun aikace-aikace a fagage kamar rarraunar hoton haske, ji na nesa da na'urar wayar hannu, da sadarwa ta ƙididdigewa. Daga cikin su, avalanche photodetector (APD) ya zama muhimmiyar jagora a fagen bincike na na'urar optoelectronic saboda halayensa na ƙananan girman, babban inganci da haɗin kai mai sauƙi. Matsakaicin siginar-zuwa-amo (SNR) muhimmiyar alama ce ta APD photodetector, wanda ke buƙatar babban riba da ƙarancin duhu. Binciken da aka yi akan van der Waals heterojunctions na abubuwa masu girma biyu (2D) yana nuna fa'ida mai fa'ida a cikin haɓakar manyan ayyuka na APDs. Masu bincike daga kasar Sin sun zabi wani abu mai girma biyu na semiconductor WSe₂ a matsayin kayan daukar hoto da kuma shirye-shiryen daukar hoto na APD da kyau tare da tsarin Pt/WSe₂/Ni wanda ke da mafi kyawun aikin da ya dace da aikin, don warware matsalar samun amo na al'ada na gargajiya na APD photodetector.
Ƙungiyar binciken ta ba da shawarar na'urar gano bayanan kankara bisa tsarin Pt/WSe₂/Ni, wanda ya sami nasarar gano siginar haske mai rauni sosai a matakin fW a zafin daki. Sun zaɓi nau'in semiconductor na WSe₂ mai girma biyu, wanda ke da kyawawan kayan lantarki, kuma sun haɗa kayan lantarki na Pt da Ni don samun nasarar haɓaka sabon nau'in binciken hoto na avalanche. Ta hanyar inganta daidaitaccen aikin da ya dace tsakanin Pt, WSe₂ da Ni, an tsara tsarin sufuri wanda zai iya toshe masu dako mai duhu yadda ya kamata yayin da yake barin masu ɗaukar hoto su wuce. Wannan tsarin yana rage yawan hayaniyar da ke haifar da tasirin ionization mai ɗaukar hoto, yana ba da damar mai gano hoto don cimma nasarar gano siginar gani mai mahimmanci a ƙaramin ƙaramar ƙaramar ƙararrawa.
Bayan haka, don fayyace hanyar da ke bayan tasirin dusar ƙanƙara da ke haifar da raunin wutar lantarki, masu binciken da farko sun ƙididdige daidaiton abubuwan da ke tattare da ayyukan ƙarfe daban-daban tare da WSe₂. An ƙirƙira jerin na'urori na ƙarfe-semiconductor-metal (MSM) tare da na'urorin lantarki daban-daban kuma an gudanar da gwaje-gwaje masu dacewa akan su. Bugu da ƙari, ta hanyar rage tarwatsa masu ɗaukar kaya kafin a fara avalanche, za a iya rage bazuwar tasirin ionization, don haka rage hayaniya. Saboda haka, an gudanar da gwaje-gwaje masu dacewa. Don ci gaba da nuna fifikon Pt/WSe₂/Ni APD dangane da halayen amsa lokaci, masu bincike sun ƙara kimanta bandwidth -3 dB na na'urar a ƙarƙashin ƙimar riba daban-daban na photoelectric.
Sakamakon gwaji ya nuna cewa Pt/WSe₂/Ni mai ganowa yana nuna ƙarancin ƙarar ƙarfin da ya dace (NEP) a zafin daki, wanda shine kawai 8.07 fW/√Hz. Wannan yana nufin cewa mai ganowa zai iya gano siginar gani mara ƙarfi. Bugu da ƙari, wannan na'urar na iya aiki da ƙarfi a mitar gyare-gyare na 20 kHz tare da babban riba na 5 × 10⁵, nasarar magance ƙwanƙwasa fasaha na na'urar ganowa ta al'ada na al'ada wanda ke da wuya a daidaita babban riba da bandwidth. Ana tsammanin wannan fasalin zai samar da shi tare da fa'idodi masu mahimmanci a cikin aikace-aikacen da ke buƙatar babban riba da ƙaramar amo.
Wannan binciken yana nuna mahimmancin rawar injiniyan kayan aiki da haɓaka haɗin gwiwa don haɓaka aikinmasu daukar hoto. Ta hanyar ƙwaƙƙwaran ƙira na na'urorin lantarki da kayan aiki masu girma biyu, an sami tasirin kariya na masu ɗaukar duhu, da rage yawan kutse da ƙara haɓaka haɓakar ganowa.
Ayyukan wannan mai ganowa ba wai kawai yana nunawa a cikin halayen hoto ba, amma har ma yana da fa'idodin aikace-aikace. Tare da ingantaccen toshe duhun halin yanzu a yanayin ɗaki da ingantaccen ɗaukar masu ɗaukar hoto, wannan mai ganowa ya dace musamman don gano siginar haske mai rauni a fagage kamar sa ido kan muhalli, kallon sararin samaniya, da sadarwa ta gani. Wannan nasarar binciken ba wai kawai yana ba da sababbin ra'ayoyi don haɓaka ƙananan kayan aikin hoto ba, amma kuma yana ba da sababbin nassoshi don bincike na gaba da ci gaban manyan ayyuka da ƙananan na'urorin optoelectronic.
Lokacin aikawa: Juni-18-2025




